Defect passivation and dark count in Geiger-mode avalanche photodiodes

J. C. Jackson; G. Healy; A. M. Kelleher; J. Alderman; J. Donnelly; P. K. Hurley; A. P. Morrison; A. Mathewson

Defect passivation and dark count in Geiger-mode avalanche photodiodes

J. C. Jackson
, G. Healy
, A. M. Kelleher
, J. Alderman
, J. Donnelly
, P. K. Hurley
, A. P. Morrison
, A. Mathewson

University College Cork

Research output: Contribution to journal › Article › peer-review

Abstract

An experimental study of post metal anneal conditions on dark count in Geiger-mode avalanche photodiodes (GM-APD) has been performed. The GM-APD structure will be shown to be extremely sensitive to post-metal anneals. Dark counts from measured samples decreased by a factor of two for each separate anneal in forming gas using temperatures from 425°C to 450 °C. Conversely anneals of 250 °C in ambient increased dark count for temperature cycles up to 124 hours. Passivation and de-passivation of defect sites within the shallow junction active area are suspected as mechanisms contributing to the variations in dark count.

Original language	English
Pages (from-to)	586-587
Number of pages	2
Journal	Annual Proceedings - Reliability Physics (Symposium)
Publication status	Published - 2003
Event	2003 IEEE International Reliability Physics Symposium Proceedings - Dallas, TX, United States Duration: 30 Mar 2003 → 4 Apr 2003

Keywords

APD
Dark count
Geiger mode avalanche photodiodes
Passivation
Reliability
Single photon counting

Cite this

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title = "Defect passivation and dark count in Geiger-mode avalanche photodiodes",

abstract = "An experimental study of post metal anneal conditions on dark count in Geiger-mode avalanche photodiodes (GM-APD) has been performed. The GM-APD structure will be shown to be extremely sensitive to post-metal anneals. Dark counts from measured samples decreased by a factor of two for each separate anneal in forming gas using temperatures from 425°C to 450 °C. Conversely anneals of 250 °C in ambient increased dark count for temperature cycles up to 124 hours. Passivation and de-passivation of defect sites within the shallow junction active area are suspected as mechanisms contributing to the variations in dark count.",

keywords = "APD, Dark count, Geiger mode avalanche photodiodes, Passivation, Reliability, Single photon counting",

author = "Jackson, \{J. C.\} and G. Healy and Kelleher, \{A. M.\} and J. Alderman and J. Donnelly and Hurley, \{P. K.\} and Morrison, \{A. P.\} and A. Mathewson",

year = "2003",

language = "English",

pages = "586--587",

journal = "Annual Proceedings - Reliability Physics (Symposium)",

issn = "0099-9512",

note = "2003 IEEE International Reliability Physics Symposium Proceedings ; Conference date: 30-03-2003 Through 04-04-2003",

}

TY - JOUR

T1 - Defect passivation and dark count in Geiger-mode avalanche photodiodes

AU - Jackson, J. C.

AU - Healy, G.

AU - Kelleher, A. M.

AU - Alderman, J.

AU - Donnelly, J.

AU - Hurley, P. K.

AU - Morrison, A. P.

AU - Mathewson, A.

PY - 2003

Y1 - 2003

N2 - An experimental study of post metal anneal conditions on dark count in Geiger-mode avalanche photodiodes (GM-APD) has been performed. The GM-APD structure will be shown to be extremely sensitive to post-metal anneals. Dark counts from measured samples decreased by a factor of two for each separate anneal in forming gas using temperatures from 425°C to 450 °C. Conversely anneals of 250 °C in ambient increased dark count for temperature cycles up to 124 hours. Passivation and de-passivation of defect sites within the shallow junction active area are suspected as mechanisms contributing to the variations in dark count.

AB - An experimental study of post metal anneal conditions on dark count in Geiger-mode avalanche photodiodes (GM-APD) has been performed. The GM-APD structure will be shown to be extremely sensitive to post-metal anneals. Dark counts from measured samples decreased by a factor of two for each separate anneal in forming gas using temperatures from 425°C to 450 °C. Conversely anneals of 250 °C in ambient increased dark count for temperature cycles up to 124 hours. Passivation and de-passivation of defect sites within the shallow junction active area are suspected as mechanisms contributing to the variations in dark count.

KW - APD

KW - Dark count

KW - Geiger mode avalanche photodiodes

KW - Passivation

KW - Reliability

KW - Single photon counting

UR - https://www.scopus.com/pages/publications/0038648901

M3 - Article

AN - SCOPUS:0038648901

SN - 0099-9512

SP - 586

EP - 587

JO - Annual Proceedings - Reliability Physics (Symposium)

JF - Annual Proceedings - Reliability Physics (Symposium)

T2 - 2003 IEEE International Reliability Physics Symposium Proceedings

Y2 - 30 March 2003 through 4 April 2003

ER -

Defect passivation and dark count in Geiger-mode avalanche photodiodes

Abstract

Keywords

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