@inproceedings{c8811859d8224e46ac91845b4f49cbf8,
title = "Defect profiling of Al2O3-passivated InGaP layers via planar test structures",
abstract = "The electrically active defects in Al2O3-passivated InGaP layers, representative of an AlInGaP red micro-light-emitting diodes (μ-LED) sidewall, are characterized by using planar metal/insulator/semiconductor (MIS) capacitors test structures. The use of a planar test structure avoids the complexity of the full μ-LED device analysis and enables the selective InGaP/Al2O3 system characterization. The electrically active defects of InGaP/Al2O3/Ni MIS test structures, subject to different surface treatments, are investigated by multifrequency capacitance-voltage (CV) and conductance-voltage (GV) curves analysis. Trap levels located in the InGaP and in the Al2O3 are detected and profiled. The effect of the surface treatment (either no treatment, wet etching, or dry etching) on the detected traps is reported.",
keywords = "AlO, defect, InGaP, sidewall, trap, μ-LED",
author = "Torraca, \{Paolo La\} and Pavel Kirilenko and Rajan Bharti and Muskan Jain and Satish Bonam and Lida Ansari and Farzan Gity and Karim Cherkaoui and Alexander Tonkikh and Dmitry Sizov and Paul Gore and Michael Grundmann and Hurley, \{Paul K.\}",
note = "Publisher Copyright: {\textcopyright} 2026 IEEE.; 38th IEEE International Conference on Microelectronic Test Structures, ICMTS 2026 ; Conference date: 23-03-2026 Through 26-03-2026",
year = "2026",
doi = "10.1109/ICMTS69943.2026.11471662",
language = "English",
series = "IEEE International Conference on Microelectronic Test Structures",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2026 38th IEEE International Conference on Microelectronic Test Structures, ICMTS 2026 - Conference Proceedings",
address = "United States",
}