Defect study of GaInP/GaAs based heterojunction bipolar transistor emitter layer

K. Cherkaoui; M. E. Murtagh; P. V. Kelly; G. M. Crean; S. Cassette; S. L. Delage; S. W. Bland

doi:10.1063/1.1500417

Defect study of GaInP/GaAs based heterojunction bipolar transistor emitter layer

K. Cherkaoui
, M. E. Murtagh
, P. V. Kelly
, G. M. Crean
, S. Cassette
, S. L. Delage
, S. W. Bland

Research output: Contribution to journal › Article › peer-review

Abstract

Defects in the emitter region of Ga _0.51In _0.49P/GaAs heterojunction bipolar transistors (HBTs) were investigated by means of deep-level transient spectroscopy. Both annealed (635°C, 5 min) and as grown metalorganic chemical vapor deposition epitaxial wafers were investigated in this study, with an electron trap observed in the HBT emitter space-charge region from both wafers. The deep-level activation energy was determined to be 0.87±0.05eV below the conduction band, the capture cross section 3×10 ^-14cm ² and the defect density of the order of 10 ¹⁴cm ^-3. This defect was also found to be localized at the emitter-base interface.

Original language	English
Pages (from-to)	2803-2806
Number of pages	4
Journal	Journal of Applied Physics
Volume	92
Issue number	5
DOIs	https://doi.org/10.1063/1.1500417
Publication status	Published - 1 Sep 2002

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@article{89a96bd6395d405eb7eac76ea07bbe1b,

title = "Defect study of GaInP/GaAs based heterojunction bipolar transistor emitter layer",

abstract = "Defects in the emitter region of Ga 0.51In 0.49P/GaAs heterojunction bipolar transistors (HBTs) were investigated by means of deep-level transient spectroscopy. Both annealed (635°C, 5 min) and as grown metalorganic chemical vapor deposition epitaxial wafers were investigated in this study, with an electron trap observed in the HBT emitter space-charge region from both wafers. The deep-level activation energy was determined to be 0.87±0.05eV below the conduction band, the capture cross section 3×10 -14cm 2 and the defect density of the order of 10 14cm -3. This defect was also found to be localized at the emitter-base interface.",

author = "K. Cherkaoui and Murtagh, \{M. E.\} and Kelly, \{P. V.\} and Crean, \{G. M.\} and S. Cassette and Delage, \{S. L.\} and Bland, \{S. W.\}",

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language = "English",

volume = "92",

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T1 - Defect study of GaInP/GaAs based heterojunction bipolar transistor emitter layer

AU - Cherkaoui, K.

AU - Murtagh, M. E.

AU - Kelly, P. V.

AU - Crean, G. M.

AU - Cassette, S.

AU - Delage, S. L.

AU - Bland, S. W.

PY - 2002/9/1

Y1 - 2002/9/1

N2 - Defects in the emitter region of Ga 0.51In 0.49P/GaAs heterojunction bipolar transistors (HBTs) were investigated by means of deep-level transient spectroscopy. Both annealed (635°C, 5 min) and as grown metalorganic chemical vapor deposition epitaxial wafers were investigated in this study, with an electron trap observed in the HBT emitter space-charge region from both wafers. The deep-level activation energy was determined to be 0.87±0.05eV below the conduction band, the capture cross section 3×10 -14cm 2 and the defect density of the order of 10 14cm -3. This defect was also found to be localized at the emitter-base interface.

AB - Defects in the emitter region of Ga 0.51In 0.49P/GaAs heterojunction bipolar transistors (HBTs) were investigated by means of deep-level transient spectroscopy. Both annealed (635°C, 5 min) and as grown metalorganic chemical vapor deposition epitaxial wafers were investigated in this study, with an electron trap observed in the HBT emitter space-charge region from both wafers. The deep-level activation energy was determined to be 0.87±0.05eV below the conduction band, the capture cross section 3×10 -14cm 2 and the defect density of the order of 10 14cm -3. This defect was also found to be localized at the emitter-base interface.

UR - https://www.scopus.com/pages/publications/0036733841

U2 - 10.1063/1.1500417

DO - 10.1063/1.1500417

M3 - Article

AN - SCOPUS:0036733841

SN - 0021-8979

VL - 92

SP - 2803

EP - 2806

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 5

ER -

Defect study of GaInP/GaAs based heterojunction bipolar transistor emitter layer

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