Degradation dynamics and breakdown of MgO gate oxides

E. Miranda; E. O'Connor; G. Hughes; P. Casey; K. Cherkaoui; S. Monaghan; R. Long; D. O'Connell; P. K. Hurley

doi:10.1016/j.mee.2009.03.009

Degradation dynamics and breakdown of MgO gate oxides

E. Miranda
, E. O'Connor
, G. Hughes
, P. Casey
, K. Cherkaoui
, S. Monaghan
, R. Long
, D. O'Connell
, P. K. Hurley

Autonomous University of Barcelona
University College Cork
Dublin City University

Research output: Contribution to journal › Article › peer-review

Abstract

The degradation dynamics of magnesium oxide (MgO) layers in MOS structures has been investigated. It is shown that the shift of the conduction characteristics caused by both ramped and constant voltage stresses is well described by power-law models and that the signature of charge trapping is still visible even after the dielectric breakdown (BD) of the insulating film. The occurrence of progressive BD in 20-nm thick films is also reported.

Original language	English
Pages (from-to)	1715-1717
Number of pages	3
Journal	Microelectronic Engineering
Volume	86
Issue number	7-9
DOIs	https://doi.org/10.1016/j.mee.2009.03.009 https://doi.org/10.1016/J.MEE.2009.03.009
Publication status	Published - Jul 2009

Keywords

Breakdown
Magnesium oxide
MOS

Access to Document

Cite this

@article{f2454c944b9b435aafc791dcb7ed901b,

title = "Degradation dynamics and breakdown of MgO gate oxides",

abstract = "The degradation dynamics of magnesium oxide (MgO) layers in MOS structures has been investigated. It is shown that the shift of the conduction characteristics caused by both ramped and constant voltage stresses is well described by power-law models and that the signature of charge trapping is still visible even after the dielectric breakdown (BD) of the insulating film. The occurrence of progressive BD in 20-nm thick films is also reported.",

keywords = "Breakdown, Magnesium oxide, MOS",

author = "E. Miranda and E. O'Connor and G. Hughes and P. Casey and K. Cherkaoui and S. Monaghan and R. Long and D. O'Connell and Hurley, \{P. K.\}",

year = "2009",

month = jul,

doi = "10.1016/j.mee.2009.03.009",

language = "English",

volume = "86",

pages = "1715--1717",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier B.V.",

number = "7-9",

}

TY - JOUR

T1 - Degradation dynamics and breakdown of MgO gate oxides

AU - Miranda, E.

AU - O'Connor, E.

AU - Hughes, G.

AU - Casey, P.

AU - Cherkaoui, K.

AU - Monaghan, S.

AU - Long, R.

AU - O'Connell, D.

AU - Hurley, P. K.

PY - 2009/7

Y1 - 2009/7

N2 - The degradation dynamics of magnesium oxide (MgO) layers in MOS structures has been investigated. It is shown that the shift of the conduction characteristics caused by both ramped and constant voltage stresses is well described by power-law models and that the signature of charge trapping is still visible even after the dielectric breakdown (BD) of the insulating film. The occurrence of progressive BD in 20-nm thick films is also reported.

AB - The degradation dynamics of magnesium oxide (MgO) layers in MOS structures has been investigated. It is shown that the shift of the conduction characteristics caused by both ramped and constant voltage stresses is well described by power-law models and that the signature of charge trapping is still visible even after the dielectric breakdown (BD) of the insulating film. The occurrence of progressive BD in 20-nm thick films is also reported.

KW - Breakdown

KW - Magnesium oxide

KW - MOS

UR - https://www.scopus.com/pages/publications/67349273025

U2 - 10.1016/j.mee.2009.03.009

DO - 10.1016/j.mee.2009.03.009

M3 - Article

AN - SCOPUS:67349273025

SN - 0167-9317

VL - 86

SP - 1715

EP - 1717

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 7-9

ER -

Degradation dynamics and breakdown of MgO gate oxides

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this