Degradation of electroless Ni(P) under-bump metallization in Sn3.5Ag and Sn37Pb solders during high-temperature storage

W. M. Chen; P. Mccloskey; P. Byrne; P. Cheasty; G. Duffy; J. F. Rohan; J. Boardman; A. Mulcahy; S. C. O'Mathuna

doi:10.1007/s11664-004-0218-3

Degradation of electroless Ni(P) under-bump metallization in Sn3.5Ag and Sn37Pb solders during high-temperature storage

W. M. Chen
, P. Mccloskey
, P. Byrne
, P. Cheasty
, G. Duffy
, J. F. Rohan
, J. Boardman
, A. Mulcahy
, S. C. O'Mathuna

University College Cork

Research output: Contribution to journal › Article › peer-review

Abstract

The interfacial reaction between electroless Ni(P) under-bump metallization (UBM) and solders is studied. A P-rich layer forms in the UBM along the solder side after reflow and thermal aging. Crack formation inside the P-rich layer can sometimes penetrate throughout the entire UBM layer structure. The Ni(P) UBM degradation occurs earlier in the Sn3.5Ag solder than in Sn37Pb because of its higher reflow temperature. Despite the formation of a P-rich layer and cracks inside the UBM, it still keeps its original function within the high-temperature storage period in this study. Explanations for the formation of the P-rich layer and cracks in the UBM are outlined along with explanations for the Ni(P) UBM degradation process.

Original language	English
Pages (from-to)	900-907
Number of pages	8
Journal	Journal of Electronic Materials
Volume	33
Issue number	8
DOIs	https://doi.org/10.1007/s11664-004-0218-3
Publication status	Published - Aug 2004

Keywords

Electroless Ni(P)
Electronic packaging
Intermetallic compound (IMC)
Lead free
Reliability
Under-bump metallization (UBM)

Access to Document

10.1007/s11664-004-0218-3

https://hdl.handle.net/10468/1496Licence: CC BY-NC-ND

Cite this

@article{aa0a85ba020640c39aca0d0411c8caec,

title = "Degradation of electroless Ni(P) under-bump metallization in Sn3.5Ag and Sn37Pb solders during high-temperature storage",

abstract = "The interfacial reaction between electroless Ni(P) under-bump metallization (UBM) and solders is studied. A P-rich layer forms in the UBM along the solder side after reflow and thermal aging. Crack formation inside the P-rich layer can sometimes penetrate throughout the entire UBM layer structure. The Ni(P) UBM degradation occurs earlier in the Sn3.5Ag solder than in Sn37Pb because of its higher reflow temperature. Despite the formation of a P-rich layer and cracks inside the UBM, it still keeps its original function within the high-temperature storage period in this study. Explanations for the formation of the P-rich layer and cracks in the UBM are outlined along with explanations for the Ni(P) UBM degradation process.",

keywords = "Electroless Ni(P), Electronic packaging, Intermetallic compound (IMC), Lead free, Reliability, Under-bump metallization (UBM)",

author = "Chen, \{W. M.\} and P. Mccloskey and P. Byrne and P. Cheasty and G. Duffy and Rohan, \{J. F.\} and J. Boardman and A. Mulcahy and O'Mathuna, \{S. C.\}",

year = "2004",

month = aug,

doi = "10.1007/s11664-004-0218-3",

language = "English",

volume = "33",

pages = "900--907",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "8",

}

TY - JOUR

T1 - Degradation of electroless Ni(P) under-bump metallization in Sn3.5Ag and Sn37Pb solders during high-temperature storage

AU - Chen, W. M.

AU - Mccloskey, P.

AU - Byrne, P.

AU - Cheasty, P.

AU - Duffy, G.

AU - Rohan, J. F.

AU - Boardman, J.

AU - Mulcahy, A.

AU - O'Mathuna, S. C.

PY - 2004/8

Y1 - 2004/8

N2 - The interfacial reaction between electroless Ni(P) under-bump metallization (UBM) and solders is studied. A P-rich layer forms in the UBM along the solder side after reflow and thermal aging. Crack formation inside the P-rich layer can sometimes penetrate throughout the entire UBM layer structure. The Ni(P) UBM degradation occurs earlier in the Sn3.5Ag solder than in Sn37Pb because of its higher reflow temperature. Despite the formation of a P-rich layer and cracks inside the UBM, it still keeps its original function within the high-temperature storage period in this study. Explanations for the formation of the P-rich layer and cracks in the UBM are outlined along with explanations for the Ni(P) UBM degradation process.

AB - The interfacial reaction between electroless Ni(P) under-bump metallization (UBM) and solders is studied. A P-rich layer forms in the UBM along the solder side after reflow and thermal aging. Crack formation inside the P-rich layer can sometimes penetrate throughout the entire UBM layer structure. The Ni(P) UBM degradation occurs earlier in the Sn3.5Ag solder than in Sn37Pb because of its higher reflow temperature. Despite the formation of a P-rich layer and cracks inside the UBM, it still keeps its original function within the high-temperature storage period in this study. Explanations for the formation of the P-rich layer and cracks in the UBM are outlined along with explanations for the Ni(P) UBM degradation process.

KW - Electroless Ni(P)

KW - Electronic packaging

KW - Intermetallic compound (IMC)

KW - Lead free

KW - Reliability

KW - Under-bump metallization (UBM)

UR - https://www.scopus.com/pages/publications/4043091246

U2 - 10.1007/s11664-004-0218-3

DO - 10.1007/s11664-004-0218-3

M3 - Article

AN - SCOPUS:4043091246

SN - 0361-5235

VL - 33

SP - 900

EP - 907

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 8

ER -

Degradation of electroless Ni(P) under-bump metallization in Sn3.5Ag and Sn37Pb solders during high-temperature storage

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this