Delta-doped HfO2/In0.53Ga0.47As inversion layers: Density-of-states bottleneck and electron mobility

Terrance O'Regan; Paul Hurley; Massimo Fischetti

doi:10.1109/IWCE.2010.5677997

Delta-doped HfO₂/In_0.53Ga_0.47As inversion layers: Density-of-states bottleneck and electron mobility

Terrance O'Regan
, Paul Hurley
, Massimo Fischetti

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

Abstract

In_0.53Ga_0.47As has become a material of interest for the continuation of Moore's Law because of its high bulk electron mobility compared to Si. One problem associated with small effective-mass semiconductors such as InGaAs is the density-of-states bottleneck, or the loss of gate-capacitance due to the low density-of-states in the conduction band. The delta-doping profile is one way to reduce the effective gate oxide thickness by confining the band-bending (and thus electron density) to a few-nanometer region under the gate. This work seeks to theoretically understand the effect of a delta-doping profile on the capacitance-voltage characteristic and electron mobility of high-k/In_0.53Ga_0.47As inversion layers.

Original language	English
Title of host publication	2010 14th International Workshop on Computational Electronics, IWCE 2010
Pages	133-136
Number of pages	4
DOIs	https://doi.org/10.1109/IWCE.2010.5677997
Publication status	Published - 2010
Event	2010 14th International Workshop on Computational Electronics, IWCE 2010 - Pisa, Italy Duration: 26 Oct 2010 → 29 Oct 2010

Publication series

Name	2010 14th International Workshop on Computational Electronics, IWCE 2010

Conference

Conference	2010 14th International Workshop on Computational Electronics, IWCE 2010
Country/Territory	Italy
City	Pisa
Period	26/10/10 → 29/10/10

Access to Document

10.1109/IWCE.2010.5677997

Cite this

O'Regan, T., Hurley, P., & Fischetti, M. (2010). Delta-doped HfO₂/In_0.53Ga_0.47As inversion layers: Density-of-states bottleneck and electron mobility. In 2010 14th International Workshop on Computational Electronics, IWCE 2010 (pp. 133-136). Article 5677997 (2010 14th International Workshop on Computational Electronics, IWCE 2010). https://doi.org/10.1109/IWCE.2010.5677997

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title = "Delta-doped HfO2/In0.53Ga0.47As inversion layers: Density-of-states bottleneck and electron mobility",

abstract = "In0.53Ga0.47As has become a material of interest for the continuation of Moore's Law because of its high bulk electron mobility compared to Si. One problem associated with small effective-mass semiconductors such as InGaAs is the density-of-states bottleneck, or the loss of gate-capacitance due to the low density-of-states in the conduction band. The delta-doping profile is one way to reduce the effective gate oxide thickness by confining the band-bending (and thus electron density) to a few-nanometer region under the gate. This work seeks to theoretically understand the effect of a delta-doping profile on the capacitance-voltage characteristic and electron mobility of high-k/In0.53Ga0.47As inversion layers.",

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year = "2010",

doi = "10.1109/IWCE.2010.5677997",

language = "English",

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series = "2010 14th International Workshop on Computational Electronics, IWCE 2010",

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O'Regan, T, Hurley, P & Fischetti, M 2010, Delta-doped HfO₂/In_0.53Ga_0.47As inversion layers: Density-of-states bottleneck and electron mobility. in 2010 14th International Workshop on Computational Electronics, IWCE 2010., 5677997, 2010 14th International Workshop on Computational Electronics, IWCE 2010, pp. 133-136, 2010 14th International Workshop on Computational Electronics, IWCE 2010, Pisa, Italy, 26/10/10. https://doi.org/10.1109/IWCE.2010.5677997

Delta-doped HfO₂/In_0.53Ga_0.47As inversion layers: Density-of-states bottleneck and electron mobility. / O'Regan, Terrance; Hurley, Paul; Fischetti, Massimo.
2010 14th International Workshop on Computational Electronics, IWCE 2010. 2010. p. 133-136 5677997 (2010 14th International Workshop on Computational Electronics, IWCE 2010).

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

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