@inbook{bb4800089dc94994aeaf5e55d9362244,
title = "Demonstration of an InGaAs gate stack with sufficient PBTI reliability by thermal budget optimization, nitridation, high-k material choice, and interface dipole",
abstract = "We have shown that the poor PBTI reliability of IIIV/high-k gate stacks is universally related to process thermal budget limitations. Low temperature anneal optimization and high-k nitridation reduce oxide defect density. In contrast to a wide distribution of defect levels in Al2O3, HfO2 on InGaAs shows a minimum defect density ∼0.2eV below the channel EC. By introducing an interface dipole, a significant reliability boost was demonstrated. While low thermal budget high-k quality and IIIV interface thermal stability constitute challenges, our results show that a reliable IIIV/high-k gate stack can be fabricated.",
author = "J. Franco and A. Vais and S. Sioncke and V. Putcha and B. Kaczer and Shie, \{B. S.\} and X. Shi and R. Mahlouji and L. Nyns and D. Zhou and N. Waldron and Maes, \{J. W.\} and Q. Xie and M. Givens and F. Tang and X. Jiang and H. Arimura and T. Schram and Ragnarsson, \{L. A.\} and \{Sibaja Hernandez\}, A. and G. Hellings and N. Horiguchi and M. Heyns and G. Groeseneken and D. Linten and N. Collaert and A. Thean",
note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 36th IEEE Symposium on VLSI Technology, VLSI Technology 2016 ; Conference date: 13-06-2016 Through 16-06-2016",
year = "2016",
month = sep,
day = "21",
doi = "10.1109/VLSIT.2016.7573371",
language = "English",
series = "Digest of Technical Papers - Symposium on VLSI Technology",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2016 IEEE Symposium on VLSI Technology, VLSI Technology 2016",
address = "United States",
}