@inbook{84bc1da884d14e91a5b9193d78f85484,
title = "Dense GaN nanocolumn arrays by hybrid top-down-regrow approach using nanosphere lithography",
abstract = "A comprehensive description of a procedure to form dense locally ordered 2D arrays of vertically aligned hexagonal in section GaN nanocolumns (NCs) without height deviations will be presented. Particular focus will be given for the preparation of silica nanosphere hard masks, dry etching to form GaN NCs, wet etching to modify NC shape, thermal annealing and regrowth to recover non-polar m-plane facets, improve NC crystal quality and array fill factor.",
author = "Zubialevich, \{V. Z.\} and P. Pampili and M. McLaren and M. Arredondo-Arechavala and G. Sabui and Shen, \{Z. J.\} and Parbrook, \{P. J.\}",
note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 18th International Conference on Nanotechnology, NANO 2018 ; Conference date: 23-07-2018 Through 26-07-2018",
year = "2018",
month = jul,
day = "2",
doi = "10.1109/NANO.2018.8626265",
language = "English",
series = "Proceedings of the IEEE Conference on Nanotechnology",
publisher = "IEEE Computer Society",
booktitle = "18th International Conference on Nanotechnology, NANO 2018",
address = "United States",
}