Dense GaN nanocolumn arrays by hybrid top-down-regrow approach using nanosphere lithography

V. Z. Zubialevich; P. Pampili; M. McLaren; M. Arredondo-Arechavala; G. Sabui; Z. J. Shen; P. J. Parbrook

doi:10.1109/NANO.2018.8626265

Dense GaN nanocolumn arrays by hybrid top-down-regrow approach using nanosphere lithography

V. Z. Zubialevich
, P. Pampili
, M. McLaren
, M. Arredondo-Arechavala
, G. Sabui
, Z. J. Shen
, P. J. Parbrook

Queen's University Belfast
Illinois Institute of Technology

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

Abstract

A comprehensive description of a procedure to form dense locally ordered 2D arrays of vertically aligned hexagonal in section GaN nanocolumns (NCs) without height deviations will be presented. Particular focus will be given for the preparation of silica nanosphere hard masks, dry etching to form GaN NCs, wet etching to modify NC shape, thermal annealing and regrowth to recover non-polar m-plane facets, improve NC crystal quality and array fill factor.

Original language	English
Title of host publication	18th International Conference on Nanotechnology, NANO 2018
Publisher	IEEE Computer Society
ISBN (Electronic)	9781538653364
DOIs	https://doi.org/10.1109/NANO.2018.8626265
Publication status	Published - 2 Jul 2018
Event	18th International Conference on Nanotechnology, NANO 2018 - Cork, Ireland Duration: 23 Jul 2018 → 26 Jul 2018

Publication series

Name	Proceedings of the IEEE Conference on Nanotechnology
Volume	2018-July
ISSN (Print)	1944-9399
ISSN (Electronic)	1944-9380

Conference

Conference	18th International Conference on Nanotechnology, NANO 2018
Country/Territory	Ireland
City	Cork
Period	23/07/18 → 26/07/18

Access to Document

10.1109/NANO.2018.8626265

Cite this

Zubialevich, V. Z., Pampili, P., McLaren, M., Arredondo-Arechavala, M., Sabui, G., Shen, Z. J., & Parbrook, P. J. (2018). Dense GaN nanocolumn arrays by hybrid top-down-regrow approach using nanosphere lithography. In 18th International Conference on Nanotechnology, NANO 2018 Article 8626265 (Proceedings of the IEEE Conference on Nanotechnology; Vol. 2018-July). IEEE Computer Society. https://doi.org/10.1109/NANO.2018.8626265

@inproceedings{84bc1da884d14e91a5b9193d78f85484,

title = "Dense GaN nanocolumn arrays by hybrid top-down-regrow approach using nanosphere lithography",

abstract = "A comprehensive description of a procedure to form dense locally ordered 2D arrays of vertically aligned hexagonal in section GaN nanocolumns (NCs) without height deviations will be presented. Particular focus will be given for the preparation of silica nanosphere hard masks, dry etching to form GaN NCs, wet etching to modify NC shape, thermal annealing and regrowth to recover non-polar m-plane facets, improve NC crystal quality and array fill factor.",

author = "Zubialevich, \{V. Z.\} and P. Pampili and M. McLaren and M. Arredondo-Arechavala and G. Sabui and Shen, \{Z. J.\} and Parbrook, \{P. J.\}",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 18th International Conference on Nanotechnology, NANO 2018 ; Conference date: 23-07-2018 Through 26-07-2018",

year = "2018",

month = jul,

day = "2",

doi = "10.1109/NANO.2018.8626265",

language = "English",

series = "Proceedings of the IEEE Conference on Nanotechnology",

publisher = "IEEE Computer Society",

booktitle = "18th International Conference on Nanotechnology, NANO 2018",

address = "United States",

}

Zubialevich, VZ, Pampili, P, McLaren, M, Arredondo-Arechavala, M, Sabui, G, Shen, ZJ & Parbrook, PJ 2018, Dense GaN nanocolumn arrays by hybrid top-down-regrow approach using nanosphere lithography. in 18th International Conference on Nanotechnology, NANO 2018., 8626265, Proceedings of the IEEE Conference on Nanotechnology, vol. 2018-July, IEEE Computer Society, 18th International Conference on Nanotechnology, NANO 2018, Cork, Ireland, 23/07/18. https://doi.org/10.1109/NANO.2018.8626265

Dense GaN nanocolumn arrays by hybrid top-down-regrow approach using nanosphere lithography. / Zubialevich, V. Z.; Pampili, P.; McLaren, M. et al.
18th International Conference on Nanotechnology, NANO 2018. IEEE Computer Society, 2018. 8626265 (Proceedings of the IEEE Conference on Nanotechnology; Vol. 2018-July).

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

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AU - McLaren, M.

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AU - Sabui, G.

AU - Shen, Z. J.

AU - Parbrook, P. J.

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N2 - A comprehensive description of a procedure to form dense locally ordered 2D arrays of vertically aligned hexagonal in section GaN nanocolumns (NCs) without height deviations will be presented. Particular focus will be given for the preparation of silica nanosphere hard masks, dry etching to form GaN NCs, wet etching to modify NC shape, thermal annealing and regrowth to recover non-polar m-plane facets, improve NC crystal quality and array fill factor.

AB - A comprehensive description of a procedure to form dense locally ordered 2D arrays of vertically aligned hexagonal in section GaN nanocolumns (NCs) without height deviations will be presented. Particular focus will be given for the preparation of silica nanosphere hard masks, dry etching to form GaN NCs, wet etching to modify NC shape, thermal annealing and regrowth to recover non-polar m-plane facets, improve NC crystal quality and array fill factor.

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T3 - Proceedings of the IEEE Conference on Nanotechnology

BT - 18th International Conference on Nanotechnology, NANO 2018

PB - IEEE Computer Society

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ER -

Dense GaN nanocolumn arrays by hybrid top-down-regrow approach using nanosphere lithography

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