Dependence of the critical thickness on Si doping of InGaAs on GaAs

B. K. Tanner; P. J. Parbrook; C. R. Whitehouse; A. M. Keir; A. D. Johnson; J. Jones; D. Wallis; L. M. Smith; B. Lunn; J. H.C. Hogg

doi:10.1063/1.1315342

Dependence of the critical thickness on Si doping of InGaAs on GaAs

B. K. Tanner
, P. J. Parbrook
, C. R. Whitehouse
, A. M. Keir
, A. D. Johnson
, J. Jones
, D. Wallis
, L. M. Smith
, B. Lunn
, J. H.C. Hogg

Research output: Contribution to journal › Article › peer-review

Abstract

The formation of misfit dislocations during the initial stages of relaxation of In_0.04Ga_0.96As epitaxial layers on (001) GaAs has been studied by in situ high-resolution double crystal x-ray topography during molecular beam epitaxy growth. Relaxation is initially anisotropic with the fast B(g) dislocations being nucleated before the slow A(g) set. On doping with Si up to a maximum concentration of 4 × 10¹⁸ atoms/cm³, an increase in critical thickness was observed for both dislocation sets. The data can be fitted to an extension of the Matthews-Blakeslee model that includes a lattice friction force varying linearly with the dopant concentration.

Original language	English
Pages (from-to)	2156-2158
Number of pages	3
Journal	Applied Physics Letters
Volume	77
Issue number	14
DOIs	https://doi.org/10.1063/1.1315342
Publication status	Published - 2 Oct 2000
Externally published	Yes

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title = "Dependence of the critical thickness on Si doping of InGaAs on GaAs",

abstract = "The formation of misfit dislocations during the initial stages of relaxation of In0.04Ga0.96As epitaxial layers on (001) GaAs has been studied by in situ high-resolution double crystal x-ray topography during molecular beam epitaxy growth. Relaxation is initially anisotropic with the fast B(g) dislocations being nucleated before the slow A(g) set. On doping with Si up to a maximum concentration of 4 × 1018 atoms/cm3, an increase in critical thickness was observed for both dislocation sets. The data can be fitted to an extension of the Matthews-Blakeslee model that includes a lattice friction force varying linearly with the dopant concentration.",

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year = "2000",

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doi = "10.1063/1.1315342",

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T1 - Dependence of the critical thickness on Si doping of InGaAs on GaAs

AU - Tanner, B. K.

AU - Parbrook, P. J.

AU - Whitehouse, C. R.

AU - Keir, A. M.

AU - Johnson, A. D.

AU - Jones, J.

AU - Wallis, D.

AU - Smith, L. M.

AU - Lunn, B.

AU - Hogg, J. H.C.

PY - 2000/10/2

Y1 - 2000/10/2

N2 - The formation of misfit dislocations during the initial stages of relaxation of In0.04Ga0.96As epitaxial layers on (001) GaAs has been studied by in situ high-resolution double crystal x-ray topography during molecular beam epitaxy growth. Relaxation is initially anisotropic with the fast B(g) dislocations being nucleated before the slow A(g) set. On doping with Si up to a maximum concentration of 4 × 1018 atoms/cm3, an increase in critical thickness was observed for both dislocation sets. The data can be fitted to an extension of the Matthews-Blakeslee model that includes a lattice friction force varying linearly with the dopant concentration.

AB - The formation of misfit dislocations during the initial stages of relaxation of In0.04Ga0.96As epitaxial layers on (001) GaAs has been studied by in situ high-resolution double crystal x-ray topography during molecular beam epitaxy growth. Relaxation is initially anisotropic with the fast B(g) dislocations being nucleated before the slow A(g) set. On doping with Si up to a maximum concentration of 4 × 1018 atoms/cm3, an increase in critical thickness was observed for both dislocation sets. The data can be fitted to an extension of the Matthews-Blakeslee model that includes a lattice friction force varying linearly with the dopant concentration.

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DO - 10.1063/1.1315342

M3 - Article

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SN - 0003-6951

VL - 77

SP - 2156

EP - 2158

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

ER -

Dependence of the critical thickness on Si doping of InGaAs on GaAs

Abstract

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