Dependence of the structural properties of ZnSe on GaAs substrate orientation

P. J. Parbrook; M. Ishikawa; Y. Nishikawa; S. Saito; M. Onomura; G. Hatakoshi

doi:10.1016/0022-0248(95)80040-J

Dependence of the structural properties of ZnSe on GaAs substrate orientation

P. J. Parbrook
, M. Ishikawa
, Y. Nishikawa
, S. Saito
, M. Onomura
, G. Hatakoshi

Toshiba Corporation

Research output: Contribution to journal › Article › peer-review

Abstract

The structural properties of undoped and nitrogen-doped ZnSe grown on (001) substrates and substrates cut at 15° from the (001) plane towards the [110] direction are compared. In the case of layers grown on the 15° off substrates, a marked improvement in the structural quality of the layers is observed for layers doped p-type using N.

Original language	English
Pages (from-to)	749-754
Number of pages	6
Journal	Journal of Crystal Growth
Volume	150
DOIs	https://doi.org/10.1016/0022-0248(95)80040-J
Publication status	Published - 1995
Externally published	Yes

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10.1016/0022-0248(95)80040-J

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@article{5ffcff60c20d4bbeb9c8736324f15995,

title = "Dependence of the structural properties of ZnSe on GaAs substrate orientation",

abstract = "The structural properties of undoped and nitrogen-doped ZnSe grown on (001) substrates and substrates cut at 15° from the (001) plane towards the [110] direction are compared. In the case of layers grown on the 15° off substrates, a marked improvement in the structural quality of the layers is observed for layers doped p-type using N.",

author = "Parbrook, \{P. J.\} and M. Ishikawa and Y. Nishikawa and S. Saito and M. Onomura and G. Hatakoshi",

year = "1995",

doi = "10.1016/0022-0248(95)80040-J",

language = "English",

volume = "150",

pages = "749--754",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Dependence of the structural properties of ZnSe on GaAs substrate orientation

AU - Parbrook, P. J.

AU - Ishikawa, M.

AU - Nishikawa, Y.

AU - Saito, S.

AU - Onomura, M.

AU - Hatakoshi, G.

PY - 1995

Y1 - 1995

N2 - The structural properties of undoped and nitrogen-doped ZnSe grown on (001) substrates and substrates cut at 15° from the (001) plane towards the [110] direction are compared. In the case of layers grown on the 15° off substrates, a marked improvement in the structural quality of the layers is observed for layers doped p-type using N.

AB - The structural properties of undoped and nitrogen-doped ZnSe grown on (001) substrates and substrates cut at 15° from the (001) plane towards the [110] direction are compared. In the case of layers grown on the 15° off substrates, a marked improvement in the structural quality of the layers is observed for layers doped p-type using N.

UR - https://www.scopus.com/pages/publications/0029309245

U2 - 10.1016/0022-0248(95)80040-J

DO - 10.1016/0022-0248(95)80040-J

M3 - Article

AN - SCOPUS:0029309245

SN - 0022-0248

VL - 150

SP - 749

EP - 754

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -

Dependence of the structural properties of ZnSe on GaAs substrate orientation

Abstract

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