Deposition of thin films of gallium sulfide from a novel single-source precursor, Ga(S2CNMeHex)3, by low-pressure metal-organic chemical vapor deposition

Mike R. Lazell; Paul O'Brien; David J. Otway; Jin Ho Park

doi:10.1021/cm9905040

Deposition of thin films of gallium sulfide from a novel single-source precursor, Ga(S₂CNMeHex)₃, by low-pressure metal-organic chemical vapor deposition

Mike R. Lazell
, Paul O'Brien
, David J. Otway
, Jin Ho Park

Imperial College London

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	3430-3432
Number of pages	3
Journal	Chemistry of Materials
Volume	11
Issue number	12
DOIs	https://doi.org/10.1021/cm9905040
Publication status	Published - 1999
Externally published	Yes

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10.1021/cm9905040

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title = "Deposition of thin films of gallium sulfide from a novel single-source precursor, Ga(S2CNMeHex)3, by low-pressure metal-organic chemical vapor deposition",

author = "Lazell, \{Mike R.\} and Paul O'Brien and Otway, \{David J.\} and Park, \{Jin Ho\}",

year = "1999",

doi = "10.1021/cm9905040",

language = "English",

volume = "11",

pages = "3430--3432",

journal = "Chemistry of Materials",

issn = "0897-4756",

publisher = "American Chemical Society",

number = "12",

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TY - JOUR

T1 - Deposition of thin films of gallium sulfide from a novel single-source precursor, Ga(S2CNMeHex)3, by low-pressure metal-organic chemical vapor deposition

AU - Lazell, Mike R.

AU - O'Brien, Paul

AU - Otway, David J.

AU - Park, Jin Ho

PY - 1999

Y1 - 1999

UR - https://www.scopus.com/pages/publications/0000181088

U2 - 10.1021/cm9905040

DO - 10.1021/cm9905040

M3 - Article

AN - SCOPUS:0000181088

SN - 0897-4756

VL - 11

SP - 3430

EP - 3432

JO - Chemistry of Materials

JF - Chemistry of Materials

IS - 12

ER -

Deposition of thin films of gallium sulfide from a novel single-source precursor, Ga(S2CNMeHex)3, by low-pressure metal-organic chemical vapor deposition

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Deposition of thin films of gallium sulfide from a novel single-source precursor, Ga(S₂CNMeHex)₃, by low-pressure metal-organic chemical vapor deposition