Design and analysis of a graded-index strained Si1-x Gex Optical PN Phase Shifter

Darpan Mishra; Ramesh Kumar Sonkar

doi:10.1109/JPHOT.2018.2880077

Design and analysis of a graded-index strained Si_1-x Ge_x Optical PN Phase Shifter

Darpan Mishra
, Ramesh Kumar Sonkar

Indian Institute of Technology Guwahati

Research output: Contribution to journal › Article › peer-review

Abstract

In this paper, a graded-index strained Si_1-x Ge_x optical PN phase shifter with multiple strained layers has been proposed for high speed data modulation at 1550 nm with low device footprint. The quasi-vectorial finite difference method, non-local empirical pseudopotential method and the Payne-Lacey model has been used to analyze the proposed device. A phase shift of 122°/mm, V_π L_π of 0.74 V.cm, and insertion loss of 4 dB at 5 V reverse bias with a 3-dB modulation bandwidth of 27.5 GHz has been obtained for a 500 nm × 250 nm cross-section rib waveguide with 50 nm slab. A 15°/mm increase in phase shift and 0.08 V.cm decrease in V_πL_π has been observed when the junction is shifted by 60 nm towards the N side.

Original language	English
Article number	8528355
Journal	IEEE Photonics Journal
Volume	10
Issue number	6
DOIs	https://doi.org/10.1109/JPHOT.2018.2880077
Publication status	Published - Dec 2018
Externally published	Yes

Keywords

Graded-index
phase shifter
silicon-germanium

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10.1109/JPHOT.2018.2880077

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title = "Design and analysis of a graded-index strained Si1-x Gex Optical PN Phase Shifter",

abstract = "In this paper, a graded-index strained Si1-x Gex optical PN phase shifter with multiple strained layers has been proposed for high speed data modulation at 1550 nm with low device footprint. The quasi-vectorial finite difference method, non-local empirical pseudopotential method and the Payne-Lacey model has been used to analyze the proposed device. A phase shift of 122°/mm, Vπ Lπ of 0.74 V.cm, and insertion loss of 4 dB at 5 V reverse bias with a 3-dB modulation bandwidth of 27.5 GHz has been obtained for a 500 nm × 250 nm cross-section rib waveguide with 50 nm slab. A 15°/mm increase in phase shift and 0.08 V.cm decrease in VπLπ has been observed when the junction is shifted by 60 nm towards the N side.",

keywords = "Graded-index, phase shifter, silicon-germanium",

author = "Darpan Mishra and Sonkar, \{Ramesh Kumar\}",

note = "Publisher Copyright: {\textcopyright} 2009-2012 IEEE.",

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doi = "10.1109/JPHOT.2018.2880077",

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T1 - Design and analysis of a graded-index strained Si1-x Gex Optical PN Phase Shifter

AU - Mishra, Darpan

AU - Sonkar, Ramesh Kumar

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N2 - In this paper, a graded-index strained Si1-x Gex optical PN phase shifter with multiple strained layers has been proposed for high speed data modulation at 1550 nm with low device footprint. The quasi-vectorial finite difference method, non-local empirical pseudopotential method and the Payne-Lacey model has been used to analyze the proposed device. A phase shift of 122°/mm, Vπ Lπ of 0.74 V.cm, and insertion loss of 4 dB at 5 V reverse bias with a 3-dB modulation bandwidth of 27.5 GHz has been obtained for a 500 nm × 250 nm cross-section rib waveguide with 50 nm slab. A 15°/mm increase in phase shift and 0.08 V.cm decrease in VπLπ has been observed when the junction is shifted by 60 nm towards the N side.

AB - In this paper, a graded-index strained Si1-x Gex optical PN phase shifter with multiple strained layers has been proposed for high speed data modulation at 1550 nm with low device footprint. The quasi-vectorial finite difference method, non-local empirical pseudopotential method and the Payne-Lacey model has been used to analyze the proposed device. A phase shift of 122°/mm, Vπ Lπ of 0.74 V.cm, and insertion loss of 4 dB at 5 V reverse bias with a 3-dB modulation bandwidth of 27.5 GHz has been obtained for a 500 nm × 250 nm cross-section rib waveguide with 50 nm slab. A 15°/mm increase in phase shift and 0.08 V.cm decrease in VπLπ has been observed when the junction is shifted by 60 nm towards the N side.

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KW - silicon-germanium

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DO - 10.1109/JPHOT.2018.2880077

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ER -

Design and analysis of a graded-index strained Si_1-x Ge_x Optical PN Phase Shifter

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