Design and fabrication of uni-traveling-carrier InGaAs photodiodes

Research output: Chapter in Book/Report/Conference proceedingsChapterpeer-review

Abstract

Photodiode (PD) is a key component in optical transmission and optical measurement systems. In this paper, we present the design and fabrication of traveling-wave edge-coupled Unitraveling Carrier (UTC) PD. The fabricated UTC PD with 40μm×5μm waveguide shows 3dB bandwidth 13GHZ and 32GHz under 0 biases and -1V respectively. In parallel, PIN PD was also fabricated for comparison and only shows 4GHz and 18GHz under same bias conditions. This indicates the UTC PD is superior to the PIN PD for higher speed operation, especially in application of system without power supply.

Original languageEnglish
Title of host publicationOptoelectronic Devices and Integration III
DOIs
Publication statusPublished - 2010
EventOptoelectronic Devices and Integration III - Beijing, China
Duration: 18 Oct 201020 Oct 2010

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume7847
ISSN (Print)0277-786X

Conference

ConferenceOptoelectronic Devices and Integration III
Country/TerritoryChina
CityBeijing
Period18/10/1020/10/10

Keywords

  • high saturation power
  • high speed
  • Photodiode
  • PIN
  • unitraveling carrier (UTC)

Fingerprint

Dive into the research topics of 'Design and fabrication of uni-traveling-carrier InGaAs photodiodes'. Together they form a unique fingerprint.

Cite this