TY - JOUR
T1 - Design considerations of vertical GaN nanowire Schottky barrier diodes
AU - Sabui, Gourab
AU - Zubialevich, Vitaly Z.
AU - White, Mary
AU - Pampili, Pietro
AU - Parbrook, Peter J.
AU - McLaren, Mathew
AU - Arredondo-Arechavala, Miryam
AU - Shen, Z. John
N1 - Publisher Copyright:
© 2017 IEEJ.
PY - 2017
Y1 - 2017
N2 - Design considerations for vertical Gallium Nitride (GaN) nanowire Schottky barrier diodes (NWSBDs) for high voltage applications is discussed in this paper. Preliminary quasi-vertical NWSBDs fabricated on a Sapphire substrate show rectifying properties with breakdown voltage of 100 V. The principle of dielectric Reduced SURface Field (RESURF) which is naturally compatible with the NW structure, is utilized to block high voltages (> 600 V) within the fabrication constraints of nano-pillar height and drift doping concentration. Design considerations for the NWSBD is explored through 3D TCAD simulations. TCAD simulations show the NWSBDs can block voltages upward of 700 V with very low on-resistance with optimal design. The measured and simulated results are compared with state of the art GaN devices to provide an understanding of the true potential of the GaN NW architecture as power devices offering high breakdown voltages and low on-state resistance and a reliable device operation, all on a vertical architecture and a non-native substrate.
AB - Design considerations for vertical Gallium Nitride (GaN) nanowire Schottky barrier diodes (NWSBDs) for high voltage applications is discussed in this paper. Preliminary quasi-vertical NWSBDs fabricated on a Sapphire substrate show rectifying properties with breakdown voltage of 100 V. The principle of dielectric Reduced SURface Field (RESURF) which is naturally compatible with the NW structure, is utilized to block high voltages (> 600 V) within the fabrication constraints of nano-pillar height and drift doping concentration. Design considerations for the NWSBD is explored through 3D TCAD simulations. TCAD simulations show the NWSBDs can block voltages upward of 700 V with very low on-resistance with optimal design. The measured and simulated results are compared with state of the art GaN devices to provide an understanding of the true potential of the GaN NW architecture as power devices offering high breakdown voltages and low on-state resistance and a reliable device operation, all on a vertical architecture and a non-native substrate.
KW - GaN
KW - Nanowire
KW - Power semiconductor devices
KW - Vertical GaN
KW - Wide bandgap devices
UR - https://www.scopus.com/pages/publications/85028500861
U2 - 10.23919/ISPSD.2017.7988917
DO - 10.23919/ISPSD.2017.7988917
M3 - Article
AN - SCOPUS:85028500861
SN - 1063-6854
SP - 191
EP - 194
JO - Proceedings of the International Symposium on Power Semiconductor Devices and ICs
JF - Proceedings of the International Symposium on Power Semiconductor Devices and ICs
M1 - 7988917
T2 - 29th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2017
Y2 - 28 May 2017 through 1 June 2017
ER -