TY - GEN
T1 - Design of 3.3 and 4.2 μm mid-infrared metamorphic quantum well light-emitting diodes
AU - Arkani, Reza
AU - Broderick, Christopher A.
AU - Orreilly, Eoin P.
N1 - Publisher Copyright:
© 2018 IEEE.
PY - 2018/12/7
Y1 - 2018/12/7
N2 - The use of Al z In 1-z As metamorphic buffer layers to facilitate the growth of lattice-mismatched InN y (As 1-x Sb x ) 1-y quantum wells on GaAs or InAs substrates has recently been demonstrated to constitute an attractive approach to developing light-emitting devices at application-rich mid-infrared wavelengths. However, little information is available regarding the fundamental properties of this newly established platform. We present a theoretical investigation and optimisation of the properties and performance of InN y (As 1-x Sb x ) 1-y /Al z In 1-z As structures designed to emit at 3.3 and 4.2 μm. We quantify the design space available to these structures in terms of the ability to engineer and optimise the optoelectronic properties, and quantify the potential of metamorphic InN y (As 1-x Sb x ) 1-y structures for the development of mid-infrared light emitters, providing guidelines for the design of optimised light-emitting diodes.
AB - The use of Al z In 1-z As metamorphic buffer layers to facilitate the growth of lattice-mismatched InN y (As 1-x Sb x ) 1-y quantum wells on GaAs or InAs substrates has recently been demonstrated to constitute an attractive approach to developing light-emitting devices at application-rich mid-infrared wavelengths. However, little information is available regarding the fundamental properties of this newly established platform. We present a theoretical investigation and optimisation of the properties and performance of InN y (As 1-x Sb x ) 1-y /Al z In 1-z As structures designed to emit at 3.3 and 4.2 μm. We quantify the design space available to these structures in terms of the ability to engineer and optimise the optoelectronic properties, and quantify the potential of metamorphic InN y (As 1-x Sb x ) 1-y structures for the development of mid-infrared light emitters, providing guidelines for the design of optimised light-emitting diodes.
UR - https://www.scopus.com/pages/publications/85060005262
U2 - 10.1109/NUSOD.2018.8570223
DO - 10.1109/NUSOD.2018.8570223
M3 - Conference proceeding
AN - SCOPUS:85060005262
T3 - Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD
SP - 119
EP - 120
BT - 18th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2018
A2 - Piprek, Joachim
A2 - Djurisic, Aleksandra B.
PB - IEEE Computer Society
T2 - 18th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2018
Y2 - 5 November 2018 through 9 November 2018
ER -