Design of a 24-GHz dual-polarized rectenna integrated on silicon

  • Simone Trovarello
  • , Diego Masotti
  • , Martino Aldrigo
  • , Mircea Modreanu
  • , Alessandra Costanzo

Research output: Chapter in Book/Report/Conference proceedingsChapterpeer-review

Abstract

This paper presents the design of an integrated and differential rectenna on silicon, operating at 24 GHz. The antenna is dual-polarized and composed by four patches on a synthetized low effective permittivity dielectric. The substrate is a structure composed of three layers of high-resistivity silicon (varepsilon-{mathrm{r}}= 11.9) where the central layer has an air cavity equal to the dimensions of the antennas. The feeding solution is performed by planar microstrip lines with inset feeds. A shunt configuration was chosen for the rectifiers with GaAs diodes. The silicon substrate assures the complete integration for on-chip systems and despite the lossy material chosen as substrate, each patch antenna presents 83% of radiation efficiency with a maximum gain of 4.82 dBi. The overall efficiency of the rectenna is 43% at a received power level of 14 dBm.

Original languageEnglish
Title of host publication2021 51st European Microwave Conference, EuMC 2021
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages684-687
Number of pages4
ISBN (Electronic)9782874870637
DOIs
Publication statusPublished - 2021
Event51st European Microwave Conference, EuMC 2021 - London, United Kingdom
Duration: 4 Apr 20226 Apr 2022

Publication series

Name2021 51st European Microwave Conference, EuMC 2021

Conference

Conference51st European Microwave Conference, EuMC 2021
Country/TerritoryUnited Kingdom
CityLondon
Period4/04/226/04/22

Keywords

  • millimeter waves
  • Rectennas
  • silicon integration
  • system on a chip

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