@inproceedings{85c827ba7b304a7e8a57b9268d7515b2,
title = "Design of a 28 GHz differential GaAs power amplifier with capacitive neutralization for 5G mmwave applications",
abstract = "This paper describes the design of a 28 GHz power amplifier (PA) in a commercial GaAs mHEMT technology using concepts that are typical for mm-wave CMOS design. Simulations show a 1dB output compression point of around 23 dBm with a 30\% power-added efficiency (PAE) at 28 GHz, while providing a gain of 12 dB. Comparison with the performance of a similar 28 GHz fully-depleted Silicon-On-Insulator (FDSOI) PA shows an increase of the compression point with 10 dB while efficiency is comparable. The high compression point of this GaAsPA offers a margin for system optimization such as a reduction of the number of antennas for beamforming.",
keywords = "28GHz, 5G, FD-SOI, GaAs",
author = "Dongyang Yan and Mark Ingels and Giovanni Mangraviti and Yao Liu and Bertrand Parvais and Niamh Waldron and Nadine Collaert and Piet Wambacq",
note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 17th IEEE International New Circuits and Systems Conference, NEWCAS 2019 ; Conference date: 23-06-2019 Through 26-06-2019",
year = "2019",
month = jun,
doi = "10.1109/NEWCAS44328.2019.8961233",
language = "English",
series = "17th IEEE International New Circuits and Systems Conference, NEWCAS 2019",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "17th IEEE International New Circuits and Systems Conference, NEWCAS 2019",
address = "United States",
}