TY - CHAP
T1 - Design of an adjustable bias circuit using a single-sided CMOS supply for avalanche photodiodes
AU - Deng, Shijie
AU - Morrison, Alan P.
PY - 2012
Y1 - 2012
N2 - A charge pump circuit operating from a single-sided CMOS supply, capable of biasing avalanche photodiodes up to 40 V with load currents in the mA range is presented. This circuit introduces new design elements that overcome previously published limitations. These elements include pass-gate voltage regulators and a mechanism for linking the negative voltage regulator to the positive voltage output. This design allows linear adjustment of the output voltage from a single control voltage. The circuit has compact dimensions of 1.55 mm × 1 mm, including bond pads, which makes it suitable for hybrid integration in a single package with an APD and two surfacemount capacitors.
AB - A charge pump circuit operating from a single-sided CMOS supply, capable of biasing avalanche photodiodes up to 40 V with load currents in the mA range is presented. This circuit introduces new design elements that overcome previously published limitations. These elements include pass-gate voltage regulators and a mechanism for linking the negative voltage regulator to the positive voltage output. This design allows linear adjustment of the output voltage from a single control voltage. The circuit has compact dimensions of 1.55 mm × 1 mm, including bond pads, which makes it suitable for hybrid integration in a single package with an APD and two surfacemount capacitors.
UR - https://www.scopus.com/pages/publications/84868297398
U2 - 10.1109/NEWCAS.2012.6328957
DO - 10.1109/NEWCAS.2012.6328957
M3 - Chapter
AN - SCOPUS:84868297398
SN - 9781467308595
T3 - 2012 IEEE 10th International New Circuits and Systems Conference, NEWCAS 2012
SP - 65
EP - 68
BT - 2012 IEEE 10th International New Circuits and Systems Conference, NEWCAS 2012
T2 - 2012 IEEE 10th International New Circuits and Systems Conference, NEWCAS 2012
Y2 - 17 June 2012 through 20 June 2012
ER -