Determination of active region overheating temperature of GaN-based light emitting diodes promising for laser media pumping

  • E. V. Lutsenko
  • , V. N. Pavlovskii
  • , A. V. Danilchyk
  • , M. V. Rzheutski
  • , A. G. Vainilovich
  • , V. Z. Zubialevich
  • , A. V. Muravitskaya
  • , G. P. Yablonskii

Research output: Chapter in Book/Report/Conference proceedingsConference proceedingpeer-review

Abstract

Overheating temperature of active region of LEDs made of Bridgelux chips was determined using long-wavelength shift of the EL spectra as well as the voltage reduction at constant current. It was shown that direct liquid active cooling of LED chip reduces drastically its thermal resistance that is promising for pumping of laser active media.

Original languageEnglish
Title of host publicationConference Proceedings - 5th International Conference on Advanced Optoelectronics and Lasers, CAOL' 2010
Pages219-221
Number of pages3
DOIs
Publication statusPublished - 2010
Externally publishedYes
Event5th International Conference on Advanced Optoelectronics and Lasers, CAOL' 2010 - Sevastopol, Crimea, Ukraine
Duration: 10 Sep 201014 Sep 2010

Publication series

NameConference Proceedings - 5th International Conference on Advanced Optoelectronics and Lasers, CAOL' 2010

Conference

Conference5th International Conference on Advanced Optoelectronics and Lasers, CAOL' 2010
Country/TerritoryUkraine
CitySevastopol, Crimea
Period10/09/1014/09/10

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