Determination of generation lifetime in intrinsic polycrystalline silicon

P. K. Hurley; S. Taylor; W. Eccleston; D. Meakin

doi:10.1063/1.101340

Determination of generation lifetime in intrinsic polycrystalline silicon

P. K. Hurley
, S. Taylor
, W. Eccleston
, D. Meakin

Research output: Contribution to journal › Article › peer-review

Abstract

A simple two-terminal method is described for the determination of generation lifetime in intrinsic polycrystalline silicon suitable for thin-film transistor applications using a metal/SiO₂ /polycrystalline silicon/n-type silicon test structure. The method consists of monitoring the high-frequency capacitance of the test structure after the application of a voltage pulse of the correct polarity to cause deep depletion in the n-type substrate. Generation lifetimes of 34 ps to 19 ns are obtained for polycrystalline silicon films of varying grain size.

Original language	English
Pages (from-to)	1525-1527
Number of pages	3
Journal	Applied Physics Letters
Volume	54
Issue number	16
DOIs	https://doi.org/10.1063/1.101340
Publication status	Published - 1989
Externally published	Yes

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10.1063/1.101340

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title = "Determination of generation lifetime in intrinsic polycrystalline silicon",

abstract = "A simple two-terminal method is described for the determination of generation lifetime in intrinsic polycrystalline silicon suitable for thin-film transistor applications using a metal/SiO2 /polycrystalline silicon/n-type silicon test structure. The method consists of monitoring the high-frequency capacitance of the test structure after the application of a voltage pulse of the correct polarity to cause deep depletion in the n-type substrate. Generation lifetimes of 34 ps to 19 ns are obtained for polycrystalline silicon films of varying grain size.",

author = "Hurley, \{P. K.\} and S. Taylor and W. Eccleston and D. Meakin",

year = "1989",

doi = "10.1063/1.101340",

language = "English",

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journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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AU - Hurley, P. K.

AU - Taylor, S.

AU - Eccleston, W.

AU - Meakin, D.

PY - 1989

Y1 - 1989

N2 - A simple two-terminal method is described for the determination of generation lifetime in intrinsic polycrystalline silicon suitable for thin-film transistor applications using a metal/SiO2 /polycrystalline silicon/n-type silicon test structure. The method consists of monitoring the high-frequency capacitance of the test structure after the application of a voltage pulse of the correct polarity to cause deep depletion in the n-type substrate. Generation lifetimes of 34 ps to 19 ns are obtained for polycrystalline silicon films of varying grain size.

AB - A simple two-terminal method is described for the determination of generation lifetime in intrinsic polycrystalline silicon suitable for thin-film transistor applications using a metal/SiO2 /polycrystalline silicon/n-type silicon test structure. The method consists of monitoring the high-frequency capacitance of the test structure after the application of a voltage pulse of the correct polarity to cause deep depletion in the n-type substrate. Generation lifetimes of 34 ps to 19 ns are obtained for polycrystalline silicon films of varying grain size.

UR - https://www.scopus.com/pages/publications/3242867874

U2 - 10.1063/1.101340

DO - 10.1063/1.101340

M3 - Article

AN - SCOPUS:3242867874

SN - 0003-6951

VL - 54

SP - 1525

EP - 1527

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

ER -

Determination of generation lifetime in intrinsic polycrystalline silicon

Abstract

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