TY - GEN
T1 - Determination of physical parameters for HfO2/SiO x/TiN MOSFET gate stacks by electrical characterization and reverse modeling
AU - Monaghan, S.
AU - Hurley, P. K.
AU - Cherkaoui, K.
AU - Negara, M. A.
AU - Schenk, A.
PY - 2008
Y1 - 2008
N2 - In this paper we present the results of a combined electrical and modeling study to determine the tunneling electron effective mass and electron affinity for HfO2. Experimental capacitance-voltage (C-V) and current-voltage (I-V) characteristics are presented for HfD2 films deposited on Si(100) substrates by atomic layer deposition (ALD) and electron beam evaporation (e-beam), with equivalent oxide thickness in the range 10 and 12.5Å. We extend on previous studies by applying a self-consistent 1D-Schrödinger-Poisson solver to the entire gate stack, including the inter-layer SiOx region and to the adjacent substrate for non-local barrier tunneling selfconsistently linked to the quantum-drift-diffusion transport model. The reverse modeling is applied to the correlated gate and drain currents in long channel MOSFET structures. Values of 0.11 ± (0.03) mo and 2.0 ± (0.25) eV were determined for the HfO 2 electron effective mass and electron affinity.
AB - In this paper we present the results of a combined electrical and modeling study to determine the tunneling electron effective mass and electron affinity for HfO2. Experimental capacitance-voltage (C-V) and current-voltage (I-V) characteristics are presented for HfD2 films deposited on Si(100) substrates by atomic layer deposition (ALD) and electron beam evaporation (e-beam), with equivalent oxide thickness in the range 10 and 12.5Å. We extend on previous studies by applying a self-consistent 1D-Schrödinger-Poisson solver to the entire gate stack, including the inter-layer SiOx region and to the adjacent substrate for non-local barrier tunneling selfconsistently linked to the quantum-drift-diffusion transport model. The reverse modeling is applied to the correlated gate and drain currents in long channel MOSFET structures. Values of 0.11 ± (0.03) mo and 2.0 ± (0.25) eV were determined for the HfO 2 electron effective mass and electron affinity.
UR - https://www.scopus.com/pages/publications/49049084904
U2 - 10.1109/ULIS.2008.4527151
DO - 10.1109/ULIS.2008.4527151
M3 - Conference proceeding
SN - 9781424417308
T3 - ULIS 2008 - 9th International Conference on ULtimate Integration of Silicon
SP - 107
EP - 110
BT - ULIS 2008 - 9th International Conference on ULtimate Integration of Silicon
T2 - 9th International Conference on ULtimate Integration of Silicon, ULIS 2008
Y2 - 13 March 2008 through 14 March 2008
ER -