Determination of physical parameters for HfO 2/SiO x/TiN MOSFET gate stacks by electrical characterization and reverse modeling

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

Original language	Undefined/Unknown
Title of host publication	2008 9th International Conference on Ultimate Integration of Silicon
Publication status	Published - 2008

Cite this

@inproceedings{a935d3b3213043f5b8132356af4b10c7,

title = "Determination of physical parameters for HfO 2/SiO x/TiN MOSFET gate stacks by electrical characterization and reverse modeling",

author = "Scott Monaghan and Hurley, \{Paul K\} and Karim Cherkaoui and MA Negara and A Schenk",

year = "2008",

language = "Undefined/Unknown",

booktitle = "2008 9th International Conference on Ultimate Integration of Silicon",

}