Determination of physical parameters for HfO2/SiOx/TiN MOSFET gate stacks by electrical characterization and reverse modeling

S. Monaghan; P. K. Hurley; K. Cherkaoui; M.A. Negara; A. Schenk

doi:10.1109/ULIS.2008.4527151

Determination of physical parameters for HfO2/SiOx/TiN MOSFET gate stacks by electrical characterization and reverse modeling

S. Monaghan
, P. K. Hurley
, K. Cherkaoui
, M.A. Negara
, A. Schenk

Tyndall MicroNano Systems

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

Original language	Undefined/Unknown
Title of host publication	2008 9th International Conference on Ultimate Integration of Silicon
Pages	107-110
Number of pages	4
DOIs	https://doi.org/10.1109/ULIS.2008.4527151
Publication status	Published - 2008

Keywords

Hafnium oxide
Decision support systems
Quadratic programming
High-k gate stacks
HfO2
reverse modeling
tunneling
electron effective mass
electron affinity

Access to Document

10.1109/ULIS.2008.4527151

Cite this

@inproceedings{328cc0d1e2be43eaaf3c17e9cbb61fa9,

title = "Determination of physical parameters for HfO2/SiOx/TiN MOSFET gate stacks by electrical characterization and reverse modeling",

keywords = "Hafnium oxide, Decision support systems, Quadratic programming, High-k gate stacks, HfO2, reverse modeling, tunneling, electron effective mass, electron affinity",

author = "S. Monaghan and Hurley, \{P. K.\} and K. Cherkaoui and M.A. Negara and A. Schenk",

year = "2008",

doi = "10.1109/ULIS.2008.4527151",

language = "Undefined/Unknown",

pages = "107--110",

booktitle = "2008 9th International Conference on Ultimate Integration of Silicon",

}

Determination of physical parameters for HfO2/SiOx/TiN MOSFET gate stacks by electrical characterization and reverse modeling. / Monaghan, S.; Hurley, P. K.; Cherkaoui, K. et al.
2008 9th International Conference on Ultimate Integration of Silicon. 2008. p. 107-110.

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

TY - GEN

T1 - Determination of physical parameters for HfO2/SiOx/TiN MOSFET gate stacks by electrical characterization and reverse modeling

AU - Monaghan, S.

AU - Hurley, P. K.

AU - Cherkaoui, K.

AU - Negara, M.A.

AU - Schenk, A.

PY - 2008

Y1 - 2008

KW - Hafnium oxide

KW - Decision support systems

KW - Quadratic programming

KW - High-k gate stacks

KW - HfO2

KW - reverse modeling

KW - tunneling

KW - electron effective mass

KW - electron affinity

U2 - 10.1109/ULIS.2008.4527151

DO - 10.1109/ULIS.2008.4527151

M3 - Conference proceeding

SP - 107

EP - 110

BT - 2008 9th International Conference on Ultimate Integration of Silicon

ER -