@inbook{d06892510ce448c9a86ab92b8b3c10bf,
title = "Determination of physical parameters for HfO2/SiO x/TiN MOSFET gate stacks by electrical characterization and reverse modeling",
abstract = "In this paper we present the results of a combined electrical and modeling study to determine the tunneling electron effective mass and electron affinity for HfO2. Experimental capacitance-voltage (C-V) and current-voltage (I-V) characteristics are presented for HfD2 films deposited on Si(100) substrates by atomic layer deposition (ALD) and electron beam evaporation (e-beam), with equivalent oxide thickness in the range 10 and 12.5{\AA}. We extend on previous studies by applying a self-consistent 1D-Schr{\"o}dinger-Poisson solver to the entire gate stack, including the inter-layer SiOx region and to the adjacent substrate for non-local barrier tunneling selfconsistently linked to the quantum-drift-diffusion transport model. The reverse modeling is applied to the correlated gate and drain currents in long channel MOSFET structures. Values of 0.11 ± (0.03) mo and 2.0 ± (0.25) eV were determined for the HfO 2 electron effective mass and electron affinity.",
keywords = "Electron affinity, Electron effective mass, HfO, High-k gate stacks, Reverse modeling, Tunneling",
author = "S. Monaghan and Hurley, \{P. K.\} and K. Cherkaoui and Negara, \{M. A.\} and A. Schenk",
year = "2008",
doi = "10.1109/ULIS.2008.4527151",
language = "English",
isbn = "9781424417308",
series = "ULIS 2008 - 9th International Conference on ULtimate Integration of Silicon",
pages = "107--110",
booktitle = "ULIS 2008 - 9th International Conference on ULtimate Integration of Silicon",
note = "9th International Conference on ULtimate Integration of Silicon, ULIS 2008 ; Conference date: 13-03-2008 Through 14-03-2008",
}