Determination of piezoelectric coefficients and elastic constant of thin films by laser scanning vibrometry techniques

  • Z. Huang
  • , G. Leighton
  • , R. Wright
  • , F. Duval
  • , H. C. Chung
  • , P. Kirby
  • , R. W. Whatmore

Research output: Other outputpeer-review

Abstract

Knowledge of the electro-active properties of piezoelectric materials is essential for the modeling and design of novel MEMS devices employing the piezoelectric effect. Cantilevers of piezoelectric thin film on Si were fabricated by using sol-gel and photolithograph wafer processing techniques. A scanning laser vibrometer was used to measure the displacement at the contact pad, the first resonant frequency and the tip deflection of the cantilever. The longitudinal (d33,f), transverse (d31,f) piezoelectric coefficients, and the Young's modulus for the piezoelectric thin films were then determined from these results. Finite element analysis (FEA) modeling was carried out to understand the device behaviors and a good agreement has been found between the measurement and the FEA simulated results.

Original languageEnglish
Number of pages6
Edition2
Volume135
DOIs
Publication statusPublished - 15 Apr 2007

Publication series

NameSensors and Actuators, A: Physical
PublisherElsevier B.V.
ISSN (Print)0924-4247

Keywords

  • Interferometer
  • Laser scanning vibrometer
  • Piezoelectric coefficients
  • PZT
  • Sol-gel

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