Determination of the Coulomb scattering parameter (α) for ALD HfO2/TiN gate n and p-MOSFETs using negative bias temperature stress

M. A. Negara; K. Cherkaoui; P. Majhi; W. Tsai; D. Bauza; G. Ghibaudo; P. K. Hurley

doi:10.1149/1.2779598

Determination of the Coulomb scattering parameter (α) for ALD HfO₂/TiN gate n and p-MOSFETs using negative bias temperature stress

M. A. Negara
, K. Cherkaoui
, P. Majhi
, W. Tsai
, D. Bauza
, G. Ghibaudo
, P. K. Hurley

Research output: Chapter in Book/Report/Conference proceedings › Chapter › peer-review

Abstract

The aim of this paper is to determine the Coulomb scattering parameter (α) for ALD HfO₂/TiN gate n and p-MOSFETs using Negative Bias Temperature Stress The charge pumping characteristics with increasing stress bias indicate interface state generation and an associated increase in bulk/interface positive charge Accounting for both the fixed positive charge and interface state generation during Negative Bias Temperature Stress, values of 2565 Vs/C and 11100 Vs/C are determined as for n and p HfO₂/TiN gate MOSFETs.

Original language	English
Title of host publication	ECS Transactions - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks
Publisher	Electrochemical Society Inc.
Pages	639-644
Number of pages	6
Edition	4
ISBN (Electronic)	9781566775700
ISBN (Print)	9781566775700
DOIs	https://doi.org/10.1149/1.2779598
Publication status	Published - 2007
Event	5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting - Washington, DC, United States Duration: 8 Oct 2007 → 10 Oct 2007

Publication series

Name	ECS Transactions
Number	4
Volume	11
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting
Country/Territory	United States
City	Washington, DC
Period	8/10/07 → 10/10/07

Access to Document

10.1149/1.2779598

Cite this

Negara, M. A., Cherkaoui, K., Majhi, P., Tsai, W., Bauza, D., Ghibaudo, G., & Hurley, P. K. (2007). Determination of the Coulomb scattering parameter (α) for ALD HfO₂/TiN gate n and p-MOSFETs using negative bias temperature stress. In ECS Transactions - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks (4 ed., pp. 639-644). (ECS Transactions; Vol. 11, No. 4). Electrochemical Society Inc.. https://doi.org/10.1149/1.2779598

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title = "Determination of the Coulomb scattering parameter (α) for ALD HfO2/TiN gate n and p-MOSFETs using negative bias temperature stress",

abstract = "The aim of this paper is to determine the Coulomb scattering parameter (α) for ALD HfO2/TiN gate n and p-MOSFETs using Negative Bias Temperature Stress The charge pumping characteristics with increasing stress bias indicate interface state generation and an associated increase in bulk/interface positive charge Accounting for both the fixed positive charge and interface state generation during Negative Bias Temperature Stress, values of 2565 Vs/C and 11100 Vs/C are determined as for n and p HfO2/TiN gate MOSFETs.",

author = "Negara, \{M. A.\} and K. Cherkaoui and P. Majhi and W. Tsai and D. Bauza and G. Ghibaudo and Hurley, \{P. K.\}",

year = "2007",

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series = "ECS Transactions",

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address = "United States",

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note = "5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting ; Conference date: 08-10-2007 Through 10-10-2007",

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Negara, MA, Cherkaoui, K, Majhi, P, Tsai, W, Bauza, D, Ghibaudo, G & Hurley, PK 2007, Determination of the Coulomb scattering parameter (α) for ALD HfO₂/TiN gate n and p-MOSFETs using negative bias temperature stress. in ECS Transactions - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks. 4 edn, ECS Transactions, no. 4, vol. 11, Electrochemical Society Inc., pp. 639-644, 5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting, Washington, DC, United States, 8/10/07. https://doi.org/10.1149/1.2779598

Determination of the Coulomb scattering parameter (α) for ALD HfO₂/TiN gate n and p-MOSFETs using negative bias temperature stress. / Negara, M. A.; Cherkaoui, K.; Majhi, P. et al.
ECS Transactions - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks. 4. ed. Electrochemical Society Inc., 2007. p. 639-644 (ECS Transactions; Vol. 11, No. 4).

Research output: Chapter in Book/Report/Conference proceedings › Chapter › peer-review

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AU - Negara, M. A.

AU - Cherkaoui, K.

AU - Majhi, P.

AU - Tsai, W.

AU - Bauza, D.

AU - Ghibaudo, G.

AU - Hurley, P. K.

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AB - The aim of this paper is to determine the Coulomb scattering parameter (α) for ALD HfO2/TiN gate n and p-MOSFETs using Negative Bias Temperature Stress The charge pumping characteristics with increasing stress bias indicate interface state generation and an associated increase in bulk/interface positive charge Accounting for both the fixed positive charge and interface state generation during Negative Bias Temperature Stress, values of 2565 Vs/C and 11100 Vs/C are determined as for n and p HfO2/TiN gate MOSFETs.

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PB - Electrochemical Society Inc.

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Y2 - 8 October 2007 through 10 October 2007

ER -

Negara MA, Cherkaoui K, Majhi P, Tsai W, Bauza D, Ghibaudo G et al. Determination of the Coulomb scattering parameter (α) for ALD HfO₂/TiN gate n and p-MOSFETs using negative bias temperature stress. In ECS Transactions - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks. 4 ed. Electrochemical Society Inc. 2007. p. 639-644. (ECS Transactions; 4). doi: 10.1149/1.2779598