Abstract
A novel technology that enables the fabrication of functional flexible silicon fibers has been developed. The concept involves building a circuit in silicon on insulator material (SOI), laying it out in such a way that its topography is linear and constrained in the direction of the wafer diameter and releasing the circuit by under-cutting the silicon dioxide layer by means of a chemical wet etch process. This leaves the fiber completely free to move and to be extracted onto a support structure. A functional device based on this experimental approach has already been fabricated in the form of a working PN junction. Subsequent active device circuits have been designed and are currently being fabricated. Results from a metal to polysilicon contact chain based on the SOI technology will also be presented in this publication.
| Original language | English |
|---|---|
| Pages (from-to) | 1119-1122 |
| Number of pages | 4 |
| Journal | Proceedings - Electronic Components and Technology Conference |
| Publication status | Published - 2003 |
| Event | 53rd Electronic Components and Technology Conference 2003 - New Orleans LA, United States Duration: 27 May 2003 → 30 May 2003 |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 9 Industry, Innovation, and Infrastructure
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