Developments in the understanding of ALD processes and applications of ALD in critical technologies: Part 1: Near IR diode laser spectroscopy as a probe of ALD chemistry Part 2: The synthesis of novel semiconductor-based photonic crystals

Martyn E. Pemble; Ian M. Povey; Francis Chalvet

doi:10.1149/1.2779080

Developments in the understanding of ALD processes and applications of ALD in critical technologies: Part 1: Near IR diode laser spectroscopy as a probe of ALD chemistry Part 2: The synthesis of novel semiconductor-based photonic crystals

Martyn E. Pemble
, Ian M. Povey
, Francis Chalvet

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

Abstract

In part one of this paper, a new approach to the in-situ study of ALD growth processes and mechanisms, involving the use of near-IR diode lasers is outlined and some preliminary results for the detection of short (10-20 ms) pulses of reactive gases introduced into the reactor under ALD-growth conditions is described. How this information is likely to improve our understanding of ALD processes and lead to the growth of new or improved materials is outlined. In part two of this paper the use of atomic layer deposition (ALD) processes for the production of new photonic bandgap materials via the infilling of colloidal photonic crystals is described giving examples for the growth Of Al ₂O₃ and VO₂. For this latter material, we present the first example of a photonic crystal that displays clear thermochromic behaviour.

Original language	English
Title of host publication	ECS Transactions - 3rd Symposium on Atomic Layer Deposition Applications
Publisher	Electrochemical Society Inc.
Pages	155-166
Number of pages	12
Edition	7
ISBN (Electronic)	9781566775731
ISBN (Print)	9781566775731
DOIs	https://doi.org/10.1149/1.2779080
Publication status	Published - 2007
Event	3rd Symposium on Atomic Layer Deposition Applications - 212th ECS Meeting - Washington, DC, United States Duration: 8 Oct 2007 → 9 Oct 2007

Publication series

Name	ECS Transactions
Number	7
Volume	11
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	3rd Symposium on Atomic Layer Deposition Applications - 212th ECS Meeting
Country/Territory	United States
City	Washington, DC
Period	8/10/07 → 9/10/07

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10.1149/1.2779080

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Pemble, M. E., Povey, I. M., & Chalvet, F. (2007). Developments in the understanding of ALD processes and applications of ALD in critical technologies: Part 1: Near IR diode laser spectroscopy as a probe of ALD chemistry Part 2: The synthesis of novel semiconductor-based photonic crystals. In ECS Transactions - 3rd Symposium on Atomic Layer Deposition Applications (7 ed., pp. 155-166). (ECS Transactions; Vol. 11, No. 7). Electrochemical Society Inc.. https://doi.org/10.1149/1.2779080

Pemble, Martyn E. ; Povey, Ian M. ; Chalvet, Francis. / Developments in the understanding of ALD processes and applications of ALD in critical technologies : Part 1: Near IR diode laser spectroscopy as a probe of ALD chemistry Part 2: The synthesis of novel semiconductor-based photonic crystals. ECS Transactions - 3rd Symposium on Atomic Layer Deposition Applications. 7. ed. Electrochemical Society Inc., 2007. pp. 155-166 (ECS Transactions; 7).

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title = "Developments in the understanding of ALD processes and applications of ALD in critical technologies: Part 1: Near IR diode laser spectroscopy as a probe of ALD chemistry Part 2: The synthesis of novel semiconductor-based photonic crystals",

abstract = "In part one of this paper, a new approach to the in-situ study of ALD growth processes and mechanisms, involving the use of near-IR diode lasers is outlined and some preliminary results for the detection of short (10-20 ms) pulses of reactive gases introduced into the reactor under ALD-growth conditions is described. How this information is likely to improve our understanding of ALD processes and lead to the growth of new or improved materials is outlined. In part two of this paper the use of atomic layer deposition (ALD) processes for the production of new photonic bandgap materials via the infilling of colloidal photonic crystals is described giving examples for the growth Of Al 2O3 and VO2. For this latter material, we present the first example of a photonic crystal that displays clear thermochromic behaviour.",

author = "Pemble, \{Martyn E.\} and Povey, \{Ian M.\} and Francis Chalvet",

year = "2007",

doi = "10.1149/1.2779080",

language = "English",

isbn = "9781566775731",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "7",

pages = "155--166",

booktitle = "ECS Transactions - 3rd Symposium on Atomic Layer Deposition Applications",

address = "United States",

edition = "7",

note = "3rd Symposium on Atomic Layer Deposition Applications - 212th ECS Meeting ; Conference date: 08-10-2007 Through 09-10-2007",

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Pemble, ME, Povey, IM & Chalvet, F 2007, Developments in the understanding of ALD processes and applications of ALD in critical technologies: Part 1: Near IR diode laser spectroscopy as a probe of ALD chemistry Part 2: The synthesis of novel semiconductor-based photonic crystals. in ECS Transactions - 3rd Symposium on Atomic Layer Deposition Applications. 7 edn, ECS Transactions, no. 7, vol. 11, Electrochemical Society Inc., pp. 155-166, 3rd Symposium on Atomic Layer Deposition Applications - 212th ECS Meeting, Washington, DC, United States, 8/10/07. https://doi.org/10.1149/1.2779080

Developments in the understanding of ALD processes and applications of ALD in critical technologies: Part 1: Near IR diode laser spectroscopy as a probe of ALD chemistry Part 2: The synthesis of novel semiconductor-based photonic crystals. / Pemble, Martyn E.; Povey, Ian M.; Chalvet, Francis.
ECS Transactions - 3rd Symposium on Atomic Layer Deposition Applications. 7. ed. Electrochemical Society Inc., 2007. p. 155-166 (ECS Transactions; Vol. 11, No. 7).

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

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T1 - Developments in the understanding of ALD processes and applications of ALD in critical technologies

T2 - 3rd Symposium on Atomic Layer Deposition Applications - 212th ECS Meeting

AU - Pemble, Martyn E.

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AU - Chalvet, Francis

PY - 2007

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AB - In part one of this paper, a new approach to the in-situ study of ALD growth processes and mechanisms, involving the use of near-IR diode lasers is outlined and some preliminary results for the detection of short (10-20 ms) pulses of reactive gases introduced into the reactor under ALD-growth conditions is described. How this information is likely to improve our understanding of ALD processes and lead to the growth of new or improved materials is outlined. In part two of this paper the use of atomic layer deposition (ALD) processes for the production of new photonic bandgap materials via the infilling of colloidal photonic crystals is described giving examples for the growth Of Al 2O3 and VO2. For this latter material, we present the first example of a photonic crystal that displays clear thermochromic behaviour.

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Pemble ME, Povey IM, Chalvet F. Developments in the understanding of ALD processes and applications of ALD in critical technologies: Part 1: Near IR diode laser spectroscopy as a probe of ALD chemistry Part 2: The synthesis of novel semiconductor-based photonic crystals. In ECS Transactions - 3rd Symposium on Atomic Layer Deposition Applications. 7 ed. Electrochemical Society Inc. 2007. p. 155-166. (ECS Transactions; 7). doi: 10.1149/1.2779080

Developments in the understanding of ALD processes and applications of ALD in critical technologies: Part 1: Near IR diode laser spectroscopy as a probe of ALD chemistry Part 2: The synthesis of novel semiconductor-based photonic crystals

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