Device characteristics of Trigate-FET with barrier constrictions in the channel

Nima Dehdashti; A. Afzalian; C. W. Lee; R. Yan; G. Fagas; J. P. Colinge

doi:10.1109/IWCE.2009.5091103

Device characteristics of Trigate-FET with barrier constrictions in the channel

Nima Dehdashti
, A. Afzalian
, C. W. Lee
, R. Yan
, G. Fagas
, J. P. Colinge

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

Abstract

We have investigated the effect of symmetric geometrical constrictions on the device characteristics of ultrathin silicon-on-insulator (SOI) nanowire with Trigate structure by means of the full real-space three dimensional Nonequilibrium Greens's Function (NEGF) method. In this study, geometrical constrictions are introduced as energy barriers near the source and the drain junctions and their strength is modulated by the potential height and the geometry. Interestingly, even at room temperature the drain current in the device shows oscillations as a function of the applied gate voltage. This can be traced to the development of transmission resonances as the channel is additionally confined along the current direction.

Original language	English
Title of host publication	Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009
DOIs	https://doi.org/10.1109/IWCE.2009.5091103
Publication status	Published - 2009
Event	2009 13th International Workshop on Computational Electronics, IWCE 2009 - Beijing, China Duration: 27 May 2009 → 29 May 2009

Publication series

Name	Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009

Conference

Conference	2009 13th International Workshop on Computational Electronics, IWCE 2009
Country/Territory	China
City	Beijing
Period	27/05/09 → 29/05/09

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10.1109/IWCE.2009.5091103

Cite this

Dehdashti, N., Afzalian, A., Lee, C. W., Yan, R., Fagas, G., & Colinge, J. P. (2009). Device characteristics of Trigate-FET with barrier constrictions in the channel. In Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009 Article 5091103 (Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009). https://doi.org/10.1109/IWCE.2009.5091103

@inproceedings{42485bd5125144b2857cf0fdd946753e,

title = "Device characteristics of Trigate-FET with barrier constrictions in the channel",

abstract = "We have investigated the effect of symmetric geometrical constrictions on the device characteristics of ultrathin silicon-on-insulator (SOI) nanowire with Trigate structure by means of the full real-space three dimensional Nonequilibrium Greens's Function (NEGF) method. In this study, geometrical constrictions are introduced as energy barriers near the source and the drain junctions and their strength is modulated by the potential height and the geometry. Interestingly, even at room temperature the drain current in the device shows oscillations as a function of the applied gate voltage. This can be traced to the development of transmission resonances as the channel is additionally confined along the current direction.",

author = "Nima Dehdashti and A. Afzalian and Lee, \{C. W.\} and R. Yan and G. Fagas and Colinge, \{J. P.\}",

year = "2009",

doi = "10.1109/IWCE.2009.5091103",

language = "English",

isbn = "9781424439270",

series = "Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009",

booktitle = "Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009",

note = "2009 13th International Workshop on Computational Electronics, IWCE 2009 ; Conference date: 27-05-2009 Through 29-05-2009",

}

Dehdashti, N, Afzalian, A, Lee, CW, Yan, R, Fagas, G & Colinge, JP 2009, Device characteristics of Trigate-FET with barrier constrictions in the channel. in Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009., 5091103, Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009, 2009 13th International Workshop on Computational Electronics, IWCE 2009, Beijing, China, 27/05/09. https://doi.org/10.1109/IWCE.2009.5091103

Device characteristics of Trigate-FET with barrier constrictions in the channel. / Dehdashti, Nima; Afzalian, A.; Lee, C. W. et al.
Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009. 2009. 5091103 (Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009).

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

TY - GEN

T1 - Device characteristics of Trigate-FET with barrier constrictions in the channel

AU - Dehdashti, Nima

AU - Afzalian, A.

AU - Lee, C. W.

AU - Yan, R.

AU - Fagas, G.

AU - Colinge, J. P.

PY - 2009

Y1 - 2009

N2 - We have investigated the effect of symmetric geometrical constrictions on the device characteristics of ultrathin silicon-on-insulator (SOI) nanowire with Trigate structure by means of the full real-space three dimensional Nonequilibrium Greens's Function (NEGF) method. In this study, geometrical constrictions are introduced as energy barriers near the source and the drain junctions and their strength is modulated by the potential height and the geometry. Interestingly, even at room temperature the drain current in the device shows oscillations as a function of the applied gate voltage. This can be traced to the development of transmission resonances as the channel is additionally confined along the current direction.

AB - We have investigated the effect of symmetric geometrical constrictions on the device characteristics of ultrathin silicon-on-insulator (SOI) nanowire with Trigate structure by means of the full real-space three dimensional Nonequilibrium Greens's Function (NEGF) method. In this study, geometrical constrictions are introduced as energy barriers near the source and the drain junctions and their strength is modulated by the potential height and the geometry. Interestingly, even at room temperature the drain current in the device shows oscillations as a function of the applied gate voltage. This can be traced to the development of transmission resonances as the channel is additionally confined along the current direction.

UR - https://www.scopus.com/pages/publications/70350212719

U2 - 10.1109/IWCE.2009.5091103

DO - 10.1109/IWCE.2009.5091103

M3 - Conference proceeding

AN - SCOPUS:70350212719

SN - 9781424439270

T3 - Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009

BT - Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009

T2 - 2009 13th International Workshop on Computational Electronics, IWCE 2009

Y2 - 27 May 2009 through 29 May 2009

ER -

Device characteristics of Trigate-FET with barrier constrictions in the channel

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