DFT Analysis of Hydrogenated Zigzag Aluminum Nitride Nanoribbons for Spintronic Devices

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Abstract

Density functional theory (DFT) and nonequilibrium Green's function (NEGF) framework are used to explore the structural, spin-polarized electronic, and spin-based transport properties of edge-hydrogenated zigzag aluminum nitride nanoribbons (ZAlNNRs). The proposed ZAlNNR is observed to be structurally stable and exhibits half-metallic nature in the magnetic state. The quantum transport property of the proposed two-terminal device model of 1H-AlN-1H demonstrates the bipolar spin-filter characteristics along with giant magnetoresistance (GMR), spin-based peak to valley current ratio (spin-PVCR), and spin-based rectification ratio (spin-RR) of the order of 1015, 1012, and 108, respectively. The calculated GMR and spin-RR of the 1H-AlN-1H device are 107 and 102 times higher than zigzag silicene nanoribbon (ZSiNR) and doped-zigzag graphene nanoribbon (doped ZGNR), respectively. The observed GMR, spin-PVCR, and spin-rectifying behavior of the reported ZAlNNR device could be deployed for multifunctional spintronic device applications.

Original languageEnglish
Pages (from-to)4494-4500
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume69
Issue number8
DOIs
Publication statusPublished - 1 Aug 2022
Externally publishedYes

Keywords

  • Aluminum nitride nanoribbons (AlNNRs)
  • density functional theory (DFT)
  • giant magnetoresistance (GMR)
  • negative differential resistance (NDR)
  • rectification properties

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