Diffusion of In0.53Ga0.47As elements through hafnium oxide during post deposition annealing

W. Cabrera; B. Brennan; H. Dong; T. P. O'Regan; I. M. Povey; S. Monaghan; E. O'Connor; P. K. Hurley; R. M. Wallace; Y. J. Chabal

doi:10.1063/1.4860960

Diffusion of In_0.53Ga_0.47As elements through hafnium oxide during post deposition annealing

W. Cabrera
, B. Brennan
, H. Dong
, T. P. O'Regan
, I. M. Povey
, S. Monaghan
, E. O'Connor
, P. K. Hurley
, R. M. Wallace
, Y. J. Chabal

Research output: Contribution to journal › Article › peer-review

Abstract

Diffusion of indium through HfO₂ after post deposition annealing in N₂ or forming gas environments is observed in HfO ₂/In_0.53Ga_0.47As stacks by low energy ion scattering and X-ray photo electron spectroscopy and found to be consistent with changes in interface layer thickness observed by transmission electron microscopy. Prior to post processing, arsenic oxide is detected at the surface of atomic layer deposition-grown HfO₂ and is desorbed upon annealing at 350 °C. Reduction of the interfacial layer thickness and potential densification of HfO₂, resulting from indium diffusion upon annealing, is confirmed by an increase in capacitance.

Original language	English
Article number	011601
Journal	Applied Physics Letters
Volume	104
Issue number	1
DOIs	https://doi.org/10.1063/1.4860960
Publication status	Published - 6 Jan 2014

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10.1063/1.4860960

https://hdl.handle.net/10468/4264Licence: CC BY-NC-ND

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title = "Diffusion of In0.53Ga0.47As elements through hafnium oxide during post deposition annealing",

abstract = "Diffusion of indium through HfO2 after post deposition annealing in N2 or forming gas environments is observed in HfO 2/In0.53Ga0.47As stacks by low energy ion scattering and X-ray photo electron spectroscopy and found to be consistent with changes in interface layer thickness observed by transmission electron microscopy. Prior to post processing, arsenic oxide is detected at the surface of atomic layer deposition-grown HfO2 and is desorbed upon annealing at 350 °C. Reduction of the interfacial layer thickness and potential densification of HfO2, resulting from indium diffusion upon annealing, is confirmed by an increase in capacitance.",

author = "W. Cabrera and B. Brennan and H. Dong and O'Regan, \{T. P.\} and Povey, \{I. M.\} and S. Monaghan and E. O'Connor and Hurley, \{P. K.\} and Wallace, \{R. M.\} and Chabal, \{Y. J.\}",

year = "2014",

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doi = "10.1063/1.4860960",

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T1 - Diffusion of In0.53Ga0.47As elements through hafnium oxide during post deposition annealing

AU - Cabrera, W.

AU - Brennan, B.

AU - Dong, H.

AU - O'Regan, T. P.

AU - Povey, I. M.

AU - Monaghan, S.

AU - O'Connor, E.

AU - Hurley, P. K.

AU - Wallace, R. M.

AU - Chabal, Y. J.

PY - 2014/1/6

Y1 - 2014/1/6

N2 - Diffusion of indium through HfO2 after post deposition annealing in N2 or forming gas environments is observed in HfO 2/In0.53Ga0.47As stacks by low energy ion scattering and X-ray photo electron spectroscopy and found to be consistent with changes in interface layer thickness observed by transmission electron microscopy. Prior to post processing, arsenic oxide is detected at the surface of atomic layer deposition-grown HfO2 and is desorbed upon annealing at 350 °C. Reduction of the interfacial layer thickness and potential densification of HfO2, resulting from indium diffusion upon annealing, is confirmed by an increase in capacitance.

AB - Diffusion of indium through HfO2 after post deposition annealing in N2 or forming gas environments is observed in HfO 2/In0.53Ga0.47As stacks by low energy ion scattering and X-ray photo electron spectroscopy and found to be consistent with changes in interface layer thickness observed by transmission electron microscopy. Prior to post processing, arsenic oxide is detected at the surface of atomic layer deposition-grown HfO2 and is desorbed upon annealing at 350 °C. Reduction of the interfacial layer thickness and potential densification of HfO2, resulting from indium diffusion upon annealing, is confirmed by an increase in capacitance.

UR - https://www.scopus.com/pages/publications/84892177875

U2 - 10.1063/1.4860960

DO - 10.1063/1.4860960

M3 - Article

AN - SCOPUS:84892177875

SN - 0003-6951

VL - 104

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

M1 - 011601

ER -

Diffusion of In_0.53Ga_0.47As elements through hafnium oxide during post deposition annealing

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