TY - GEN
T1 - Dilute bismide alloys grown on GaAs and InP substrates for improved near- and mid-infrared semiconductor lasers
AU - Broderick, Christopher A.
AU - Xiong, Wanshu
AU - Sweeney, Stephen J.
AU - O'Reilly, Eoin P.
AU - Rorison, Judy M.
N1 - Publisher Copyright:
© 2016 IEEE.
PY - 2016/8/23
Y1 - 2016/8/23
N2 - We present an analysis of dilute bismide quantum well (QW) lasers grown on GaAs and InP substrates. Our theoretical analysis is based upon a 12-band k·p Hamiltonian which directly incorporates the strong impact of Bi incorporation on the band structure using a band-anticrossing approach. For GaBiAs QWs grown on GaAs we analyse the device performance as a function of Bi composition, and quantify the potential to use GaBiAs alloys to realise highly efficient, temperature stable 1.55 μm lasers. We compare our calculations to measured spontaneous emission (SE) and gain spectra for first-generation GaBiAs lasers and demonstrate quantitative agreement between theory and experiment. We also present a theoretical analysis of InGaBiAs alloys grown on InP substrates. We show that this material system is well suited to the development of mid-infrared lasers, and offers the potential to realise highly efficient InP-based diode lasers incorporating type-I QWs and emitting at > 3 μm. We quantify the theoretical performance of this new class of mid-infrared lasers, and identify optimised structures for emission across the application-rich 3 - 5 μm wavelength range. Our results highlight and quantify the potential of dilute bismide alloys to overcome several limitations associated with existing GaAs- and InP-based near- and mid-infrared laser technologies.
AB - We present an analysis of dilute bismide quantum well (QW) lasers grown on GaAs and InP substrates. Our theoretical analysis is based upon a 12-band k·p Hamiltonian which directly incorporates the strong impact of Bi incorporation on the band structure using a band-anticrossing approach. For GaBiAs QWs grown on GaAs we analyse the device performance as a function of Bi composition, and quantify the potential to use GaBiAs alloys to realise highly efficient, temperature stable 1.55 μm lasers. We compare our calculations to measured spontaneous emission (SE) and gain spectra for first-generation GaBiAs lasers and demonstrate quantitative agreement between theory and experiment. We also present a theoretical analysis of InGaBiAs alloys grown on InP substrates. We show that this material system is well suited to the development of mid-infrared lasers, and offers the potential to realise highly efficient InP-based diode lasers incorporating type-I QWs and emitting at > 3 μm. We quantify the theoretical performance of this new class of mid-infrared lasers, and identify optimised structures for emission across the application-rich 3 - 5 μm wavelength range. Our results highlight and quantify the potential of dilute bismide alloys to overcome several limitations associated with existing GaAs- and InP-based near- and mid-infrared laser technologies.
KW - dilute bismide alloys
KW - Highly-mismatched semiconductors
KW - long-wavelength semiconductor lasers
UR - https://www.scopus.com/pages/publications/84985991289
U2 - 10.1109/ICTON.2016.7550303
DO - 10.1109/ICTON.2016.7550303
M3 - Conference proceeding
AN - SCOPUS:84985991289
T3 - International Conference on Transparent Optical Networks
BT - 2016 18th International Conference on Transparent Optical Networks, ICTON 2016
PB - IEEE Computer Society
T2 - 18th International Conference on Transparent Optical Networks, ICTON 2016
Y2 - 10 July 2016 through 14 July 2016
ER -