Dilute bismide alloys grown on GaAs and InP substrates for improved near- and mid-infrared semiconductor lasers

Research output: Chapter in Book/Report/Conference proceedingsChapterpeer-review

Abstract

We present an analysis of dilute bismide quantum well (QW) lasers grown on GaAs and InP substrates. Our theoretical analysis is based upon a 12-band k·p Hamiltonian which directly incorporates the strong impact of Bi incorporation on the band structure using a band-anticrossing approach. For GaBiAs QWs grown on GaAs we analyse the device performance as a function of Bi composition, and quantify the potential to use GaBiAs alloys to realise highly efficient, temperature stable 1.55 μm lasers. We compare our calculations to measured spontaneous emission (SE) and gain spectra for first-generation GaBiAs lasers and demonstrate quantitative agreement between theory and experiment. We also present a theoretical analysis of InGaBiAs alloys grown on InP substrates. We show that this material system is well suited to the development of mid-infrared lasers, and offers the potential to realise highly efficient InP-based diode lasers incorporating type-I QWs and emitting at > 3 μm. We quantify the theoretical performance of this new class of mid-infrared lasers, and identify optimised structures for emission across the application-rich 3 - 5 μm wavelength range. Our results highlight and quantify the potential of dilute bismide alloys to overcome several limitations associated with existing GaAs- and InP-based near- and mid-infrared laser technologies.

Original languageEnglish
Title of host publication2016 18th International Conference on Transparent Optical Networks, ICTON 2016
PublisherIEEE Computer Society
ISBN (Electronic)9781509014675
DOIs
Publication statusPublished - 23 Aug 2016
Externally publishedYes
Event18th International Conference on Transparent Optical Networks, ICTON 2016 - Trento, Italy
Duration: 10 Jul 201614 Jul 2016

Publication series

NameInternational Conference on Transparent Optical Networks
Volume2016-August
ISSN (Electronic)2162-7339

Conference

Conference18th International Conference on Transparent Optical Networks, ICTON 2016
Country/TerritoryItaly
CityTrento
Period10/07/1614/07/16

Keywords

  • dilute bismide alloys
  • Highly-mismatched semiconductors
  • long-wavelength semiconductor lasers

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