Abstract
A novel direct parameter extraction strategy for the BSIM3v3 MOSFET model, and it's application to hot-carrier reliability simulation, is presented in this paper. The use of direct extraction procedures allows a very fast extraction of circuit reliability parameters, with a minimum of measurements, and produces physically relevant parameters. The extraction routines presented are based on the device equations of BSIM3v3, and the use of a direct scheme over an optimized scheme makes the extraction routines repeatable over a wide range of experimental conditions. The more common commercial reliability simulators available in the industrial market generate predicted parameter sets after selected durations of device operation by interpolation (or extrapolation) between measured parameter sets extracted at intervals, during a constant-bias stress. The work presented here suggests that confidence in the predicted circuit performance is dependent on very careful choice of both the parameter sets supplied to the reliability simulator, and the applied stressing conditions.
| Original language | English |
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| Pages | 133-139 |
| Number of pages | 7 |
| Publication status | Published - 1997 |
| Event | Proceedings of the 1997 6th International Symposium on the Physical & Failure Analysis of Integrated Circuits, IPFA - Singapore, Singapore Duration: 21 Jul 1997 → 25 Jul 1997 |
Conference
| Conference | Proceedings of the 1997 6th International Symposium on the Physical & Failure Analysis of Integrated Circuits, IPFA |
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| City | Singapore, Singapore |
| Period | 21/07/97 → 25/07/97 |