Direct imaging of 0.81 μm and 0.98 μm tapered and broad stripe semiconductor laser diodes

Peter O'Brien; John McInerney

Direct imaging of 0.81 μm and 0.98 μm tapered and broad stripe semiconductor laser diodes

Peter O'Brien
, John McInerney

National University of Ireland

Research output: Contribution to journal › Article › peer-review

Abstract

Tapered gain region lasers and amplifiers can produce diffraction limited output powers up to several watts in continuous wave (CW) operation. They are relatively easy to fabricate and are integratable with other elements. Analyzing the optical field inside the cavity is highly desirable for a more detailed understanding of the modal structure and filamentation which affects the spatial coherence. A technique which allows to image the interiors of semiconductor lasers during high power operation is developed. The results from the analysis of tapered and broad stripe lasers operating at 0.81 μm and 0.98 μm are presented.

Original language	English
Pages (from-to)	409-410
Number of pages	2
Journal	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume	2
Publication status	Published - 1997
Externally published	Yes
Event	Proceedings of the 1997 10th IEEE Lasers and Electro-Optics Society Annual Meeting, LEOS. Part 2 (of 2) - San Francisco, CA, USA Duration: 10 Nov 1997 → 13 Nov 1997

Cite this

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title = "Direct imaging of 0.81 μm and 0.98 μm tapered and broad stripe semiconductor laser diodes",

abstract = "Tapered gain region lasers and amplifiers can produce diffraction limited output powers up to several watts in continuous wave (CW) operation. They are relatively easy to fabricate and are integratable with other elements. Analyzing the optical field inside the cavity is highly desirable for a more detailed understanding of the modal structure and filamentation which affects the spatial coherence. A technique which allows to image the interiors of semiconductor lasers during high power operation is developed. The results from the analysis of tapered and broad stripe lasers operating at 0.81 μm and 0.98 μm are presented.",

author = "Peter O'Brien and John McInerney",

year = "1997",

language = "English",

volume = "2",

pages = "409--410",

journal = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS",

issn = "1092-8081",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1997 10th IEEE Lasers and Electro-Optics Society Annual Meeting, LEOS. Part 2 (of 2) ; Conference date: 10-11-1997 Through 13-11-1997",

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TY - JOUR

T1 - Direct imaging of 0.81 μm and 0.98 μm tapered and broad stripe semiconductor laser diodes

AU - O'Brien, Peter

AU - McInerney, John

PY - 1997

Y1 - 1997

N2 - Tapered gain region lasers and amplifiers can produce diffraction limited output powers up to several watts in continuous wave (CW) operation. They are relatively easy to fabricate and are integratable with other elements. Analyzing the optical field inside the cavity is highly desirable for a more detailed understanding of the modal structure and filamentation which affects the spatial coherence. A technique which allows to image the interiors of semiconductor lasers during high power operation is developed. The results from the analysis of tapered and broad stripe lasers operating at 0.81 μm and 0.98 μm are presented.

AB - Tapered gain region lasers and amplifiers can produce diffraction limited output powers up to several watts in continuous wave (CW) operation. They are relatively easy to fabricate and are integratable with other elements. Analyzing the optical field inside the cavity is highly desirable for a more detailed understanding of the modal structure and filamentation which affects the spatial coherence. A technique which allows to image the interiors of semiconductor lasers during high power operation is developed. The results from the analysis of tapered and broad stripe lasers operating at 0.81 μm and 0.98 μm are presented.

UR - https://www.scopus.com/pages/publications/0031344635

M3 - Article

AN - SCOPUS:0031344635

SN - 1092-8081

VL - 2

SP - 409

EP - 410

JO - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

JF - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

T2 - Proceedings of the 1997 10th IEEE Lasers and Electro-Optics Society Annual Meeting, LEOS. Part 2 (of 2)

Y2 - 10 November 1997 through 13 November 1997

ER -

Direct imaging of 0.81 μm and 0.98 μm tapered and broad stripe semiconductor laser diodes

Abstract

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