Direct, independent measurement of twist and tilt mosaic as a function of thickness in epitaxial GaN

T. A. Lafford; P. J. Parbrook; B. K. Tanner

doi:10.1002/pssc.200390109

Direct, independent measurement of twist and tilt mosaic as a function of thickness in epitaxial GaN

T. A. Lafford
, P. J. Parbrook
, B. K. Tanner

Research output: Contribution to journal › Article › peer-review

Abstract

The twist and tilt mosaics in a series of GaN epitaxial films grown by metal-organic vapour-phase epitaxy (MOVPE) have been measured directly by grazing incidence in-plane X-ray diffraction and in the standard symmetric high resolution setting. The variation in tilt mosaic with layer thickness fits well the model of Ayers. A similarly good fit to the same function for the twist mosaic dependence on epilayer thickness is found, indicating that the ratio of edge to screw dislocations remains constant for all films.

Original language	English
Pages (from-to)	542-545
Number of pages	4
Journal	Physica Status Solidi C: Conferences
Issue number	1
DOIs	https://doi.org/10.1002/pssc.200390109
Publication status	Published - 1 Dec 2002
Externally published	Yes
Event	2nd International Workshop on Nitride Semiconductors, IWN 2002 - Aachen, Germany Duration: 22 Jul 2002 → 25 Jul 2002

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abstract = "The twist and tilt mosaics in a series of GaN epitaxial films grown by metal-organic vapour-phase epitaxy (MOVPE) have been measured directly by grazing incidence in-plane X-ray diffraction and in the standard symmetric high resolution setting. The variation in tilt mosaic with layer thickness fits well the model of Ayers. A similarly good fit to the same function for the twist mosaic dependence on epilayer thickness is found, indicating that the ratio of edge to screw dislocations remains constant for all films.",

author = "Lafford, \{T. A.\} and Parbrook, \{P. J.\} and Tanner, \{B. K.\}",

year = "2002",

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doi = "10.1002/pssc.200390109",

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T1 - Direct, independent measurement of twist and tilt mosaic as a function of thickness in epitaxial GaN

AU - Lafford, T. A.

AU - Parbrook, P. J.

AU - Tanner, B. K.

PY - 2002/12/1

Y1 - 2002/12/1

N2 - The twist and tilt mosaics in a series of GaN epitaxial films grown by metal-organic vapour-phase epitaxy (MOVPE) have been measured directly by grazing incidence in-plane X-ray diffraction and in the standard symmetric high resolution setting. The variation in tilt mosaic with layer thickness fits well the model of Ayers. A similarly good fit to the same function for the twist mosaic dependence on epilayer thickness is found, indicating that the ratio of edge to screw dislocations remains constant for all films.

AB - The twist and tilt mosaics in a series of GaN epitaxial films grown by metal-organic vapour-phase epitaxy (MOVPE) have been measured directly by grazing incidence in-plane X-ray diffraction and in the standard symmetric high resolution setting. The variation in tilt mosaic with layer thickness fits well the model of Ayers. A similarly good fit to the same function for the twist mosaic dependence on epilayer thickness is found, indicating that the ratio of edge to screw dislocations remains constant for all films.

UR - https://www.scopus.com/pages/publications/84875109303

U2 - 10.1002/pssc.200390109

DO - 10.1002/pssc.200390109

M3 - Article

AN - SCOPUS:84875109303

SN - 1610-1634

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EP - 545

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

IS - 1

T2 - 2nd International Workshop on Nitride Semiconductors, IWN 2002

Y2 - 22 July 2002 through 25 July 2002

ER -

Direct, independent measurement of twist and tilt mosaic as a function of thickness in epitaxial GaN

Abstract

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