Direct liquid injection MOCVD growth of TiO2 films using the precursor Ti(mpd)(dmae)2

A. Awaluddin; M. E. Pemble; A. C. Jones; P. A. Williams

doi:10.1051/jp4:2001367

Direct liquid injection MOCVD growth of TiO₂ films using the precursor Ti(mpd)(dmae)₂

A. Awaluddin
, M. E. Pemble
, A. C. Jones
, P. A. Williams

University of Salford

Research output: Contribution to journal › Article › peer-review

Abstract

We describe a comparative study of the direct liquid injection CVD growth of TiO₂ using the conventional precursor Ti(OPrⁱ)₄ and a new precursor Ti(mpd)(dmae)₂ where mpd=2-methylpentane-2,4diolate, CH₃CHOCH₂C(CH₃)₂ and dmae= N,N'dimethylaminoethoxide, OCH₂CH₂N(CH₃)₂. Data are presented which demonstrate that as compared to Ti(Oprⁱ)₄, use of this new precursor extends the available temperature window for growth, while producing films in which the proportion of anatase to rutile varies with growth conditions. Rutile formation is observed to be favoured by the use of higher growth temperatures and the use of oxygen as a constituent gas. We also show that like some other novel precursor systems, the addition of an oxygen flow reduces the growth rate significantly, yet also improves the morphology of the film as measured using atomic force microscopy. We com ment briefly on the possible reasons for this behaviour.

Original language	English
Pages (from-to)	Pr3531-Pr3537
Journal	Journal De Physique. IV : JP
Volume	11
Issue number	3
DOIs	https://doi.org/10.1051/jp4:2001367
Publication status	Published - 2001
Event	13th European Conference on Chemical Vapor Deposition (EUROCVD 13) - Athens, Greece Duration: 26 Aug 2001 → 31 Aug 2001

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@article{f46fb00bcd22424fa526e8fcedb99d52,

title = "Direct liquid injection MOCVD growth of TiO2 films using the precursor Ti(mpd)(dmae)2",

abstract = "We describe a comparative study of the direct liquid injection CVD growth of TiO2 using the conventional precursor Ti(OPri)4 and a new precursor Ti(mpd)(dmae)2 where mpd=2-methylpentane-2,4diolate, CH3CHOCH2C(CH3)2 and dmae= N,N'dimethylaminoethoxide, OCH2CH2N(CH3)2. Data are presented which demonstrate that as compared to Ti(Opri)4, use of this new precursor extends the available temperature window for growth, while producing films in which the proportion of anatase to rutile varies with growth conditions. Rutile formation is observed to be favoured by the use of higher growth temperatures and the use of oxygen as a constituent gas. We also show that like some other novel precursor systems, the addition of an oxygen flow reduces the growth rate significantly, yet also improves the morphology of the film as measured using atomic force microscopy. We com ment briefly on the possible reasons for this behaviour.",

author = "A. Awaluddin and Pemble, \{M. E.\} and Jones, \{A. C.\} and Williams, \{P. A.\}",

year = "2001",

doi = "10.1051/jp4:2001367",

language = "English",

volume = "11",

pages = "Pr3531--Pr3537",

journal = "Journal De Physique. IV : JP",

issn = "1155-4339",

publisher = "Springer Verlag",

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note = "13th European Conference on Chemical Vapor Deposition (EUROCVD 13) ; Conference date: 26-08-2001 Through 31-08-2001",

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T1 - Direct liquid injection MOCVD growth of TiO2 films using the precursor Ti(mpd)(dmae)2

AU - Awaluddin, A.

AU - Pemble, M. E.

AU - Jones, A. C.

AU - Williams, P. A.

PY - 2001

Y1 - 2001

N2 - We describe a comparative study of the direct liquid injection CVD growth of TiO2 using the conventional precursor Ti(OPri)4 and a new precursor Ti(mpd)(dmae)2 where mpd=2-methylpentane-2,4diolate, CH3CHOCH2C(CH3)2 and dmae= N,N'dimethylaminoethoxide, OCH2CH2N(CH3)2. Data are presented which demonstrate that as compared to Ti(Opri)4, use of this new precursor extends the available temperature window for growth, while producing films in which the proportion of anatase to rutile varies with growth conditions. Rutile formation is observed to be favoured by the use of higher growth temperatures and the use of oxygen as a constituent gas. We also show that like some other novel precursor systems, the addition of an oxygen flow reduces the growth rate significantly, yet also improves the morphology of the film as measured using atomic force microscopy. We com ment briefly on the possible reasons for this behaviour.

AB - We describe a comparative study of the direct liquid injection CVD growth of TiO2 using the conventional precursor Ti(OPri)4 and a new precursor Ti(mpd)(dmae)2 where mpd=2-methylpentane-2,4diolate, CH3CHOCH2C(CH3)2 and dmae= N,N'dimethylaminoethoxide, OCH2CH2N(CH3)2. Data are presented which demonstrate that as compared to Ti(Opri)4, use of this new precursor extends the available temperature window for growth, while producing films in which the proportion of anatase to rutile varies with growth conditions. Rutile formation is observed to be favoured by the use of higher growth temperatures and the use of oxygen as a constituent gas. We also show that like some other novel precursor systems, the addition of an oxygen flow reduces the growth rate significantly, yet also improves the morphology of the film as measured using atomic force microscopy. We com ment briefly on the possible reasons for this behaviour.

UR - https://www.scopus.com/pages/publications/0034849219

U2 - 10.1051/jp4:2001367

DO - 10.1051/jp4:2001367

M3 - Article

AN - SCOPUS:0034849219

SN - 1155-4339

VL - 11

SP - Pr3531-Pr3537

JO - Journal De Physique. IV : JP

JF - Journal De Physique. IV : JP

IS - 3

T2 - 13th European Conference on Chemical Vapor Deposition (EUROCVD 13)

Y2 - 26 August 2001 through 31 August 2001

ER -

Direct liquid injection MOCVD growth of TiO₂ films using the precursor Ti(mpd)(dmae)₂

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