Direct parameter extraction for hot-carrier reliability simulation

S. Minehane; S. Healy; P. O'Sullivan; K. McCarthy; A. Mathewson; B. Mason

doi:10.1016/S0026-2714(97)00081-4

Direct parameter extraction for hot-carrier reliability simulation

S. Minehane
, S. Healy
, P. O'Sullivan
, K. McCarthy
, A. Mathewson
, B. Mason

School of Engineering and Architecture

Research output: Contribution to journal › Article › peer-review

Abstract

This work describes the application of a novel direct parameter extraction strategy for the BSIM3v3 MOSFET model to the hot-carrier reliability simulation problem. The use of direct extraction procedures allows a very fast extraction of circuit reliability parameters, with a minimum of measurements, and produces physically relevant parameters. The evolution of the extracted parameters during a hot-carrier stress can then be investigated, and the fit of a power-law model to this evolution can be examined.

Original language	English
Pages (from-to)	1437-1440
Number of pages	4
Journal	Microelectronics Reliability
Volume	37
Issue number	10-11
DOIs	https://doi.org/10.1016/S0026-2714(97)00081-4
Publication status	Published - 1997

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10.1016/S0026-2714(97)00081-4

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title = "Direct parameter extraction for hot-carrier reliability simulation",

abstract = "This work describes the application of a novel direct parameter extraction strategy for the BSIM3v3 MOSFET model to the hot-carrier reliability simulation problem. The use of direct extraction procedures allows a very fast extraction of circuit reliability parameters, with a minimum of measurements, and produces physically relevant parameters. The evolution of the extracted parameters during a hot-carrier stress can then be investigated, and the fit of a power-law model to this evolution can be examined.",

author = "S. Minehane and S. Healy and P. O'Sullivan and K. McCarthy and A. Mathewson and B. Mason",

year = "1997",

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language = "English",

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T1 - Direct parameter extraction for hot-carrier reliability simulation

AU - Minehane, S.

AU - Healy, S.

AU - O'Sullivan, P.

AU - McCarthy, K.

AU - Mathewson, A.

AU - Mason, B.

PY - 1997

Y1 - 1997

N2 - This work describes the application of a novel direct parameter extraction strategy for the BSIM3v3 MOSFET model to the hot-carrier reliability simulation problem. The use of direct extraction procedures allows a very fast extraction of circuit reliability parameters, with a minimum of measurements, and produces physically relevant parameters. The evolution of the extracted parameters during a hot-carrier stress can then be investigated, and the fit of a power-law model to this evolution can be examined.

AB - This work describes the application of a novel direct parameter extraction strategy for the BSIM3v3 MOSFET model to the hot-carrier reliability simulation problem. The use of direct extraction procedures allows a very fast extraction of circuit reliability parameters, with a minimum of measurements, and produces physically relevant parameters. The evolution of the extracted parameters during a hot-carrier stress can then be investigated, and the fit of a power-law model to this evolution can be examined.

UR - https://www.scopus.com/pages/publications/0031250838

U2 - 10.1016/S0026-2714(97)00081-4

DO - 10.1016/S0026-2714(97)00081-4

M3 - Article

AN - SCOPUS:0031250838

SN - 0026-2714

VL - 37

SP - 1437

EP - 1440

JO - Microelectronics Reliability

JF - Microelectronics Reliability

IS - 10-11

ER -

Direct parameter extraction for hot-carrier reliability simulation

Abstract

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