Disentangling the Impact of Point Defect Density and Carrier Localization-Enhanced Auger Recombination on Efficiency Droop in (In,Ga)N/GaN Quantum Wells
- R. M. Barrett
- , J. M. McMahon
- , R. Ahumada-Lazo
- , J. A. Alanis
- , P. Parkinson
- , S. Schulz
- , M. J. Kappers
- , R. A. Oliver
- , D. Binks
- University of Manchester
- University of Cambridge
Research output: Contribution to journal › Article › peer-review