Distributed contact flip chip InGaN/GaN blue LED; comparison with conventional LEDs

M. Genç; V. Sheremet; M. Elçi; A. E. Kasapoğlu; Altuntaş; Demir; G. Eğin; S. İslamoğlu; Emre Gür; N. Muzafferoğlu; S. Elagöz; O. Gülseren; A. Aydınlı

doi:10.1016/j.spmi.2019.01.008

Distributed contact flip chip InGaN/GaN blue LED; comparison with conventional LEDs

M. Genç
, V. Sheremet
, M. Elçi
, A. E. Kasapoğlu
, Altuntaş
, Demir
, G. Eğin
, S. İslamoğlu
, Emre Gür
, N. Muzafferoğlu
, S. Elagöz
, O. Gülseren
, A. Aydınlı

Research output: Contribution to journal › Article › peer-review

Abstract

This paper presents high performance, GaN/InGaN-based light emitting diodes (LEDs) in three different device configurations, namely Top Emitting (TE) LED, conventional Flip Chip (FC) and Distributed Contact (DC) FC. Series resistances as low as 1.1 Ω have been obtained from FC device configurations with a back reflecting ohmic contact of Ni/Au/RTA/Ni/Ag metal stack. A small shift has been observed between electroluminescence (EL) emissions of TE LED and the FC LEDs. In addition, FWHM value of the EL emission of DCFC LED has shown the minimum value of 160 meV (26.9 nm). Furthermore, DCFC LED configuration has shown the highest quantum efficiency and power output, with 330 mW at 500 mA current injection, compared to that of traditional wire bonded TE LEDs and the conventional FC LEDs.

Original language	English
Pages (from-to)	9-13
Number of pages	5
Journal	Superlattices and Microstructures
Volume	128
DOIs	https://doi.org/10.1016/j.spmi.2019.01.008
Publication status	Published - Apr 2019
Externally published	Yes

Keywords

Current distribution
LED performance
Light emitting diodes
Luminescence

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10.1016/j.spmi.2019.01.008

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@article{58acb7dd8e7746ef9933a09f47d6b468,

title = "Distributed contact flip chip InGaN/GaN blue LED; comparison with conventional LEDs",

abstract = "This paper presents high performance, GaN/InGaN-based light emitting diodes (LEDs) in three different device configurations, namely Top Emitting (TE) LED, conventional Flip Chip (FC) and Distributed Contact (DC) FC. Series resistances as low as 1.1 Ω have been obtained from FC device configurations with a back reflecting ohmic contact of Ni/Au/RTA/Ni/Ag metal stack. A small shift has been observed between electroluminescence (EL) emissions of TE LED and the FC LEDs. In addition, FWHM value of the EL emission of DCFC LED has shown the minimum value of 160 meV (26.9 nm). Furthermore, DCFC LED configuration has shown the highest quantum efficiency and power output, with 330 mW at 500 mA current injection, compared to that of traditional wire bonded TE LEDs and the conventional FC LEDs.",

keywords = "Current distribution, LED performance, Light emitting diodes, Luminescence",

author = "M. Gen{\c c} and V. Sheremet and M. El{\c c}i and Kasapoğlu, \{A. E.\} and Altunta{\c s} and Demir and G. Eğin and S. İslamoğlu and Emre G{\"u}r and N. Muzafferoğlu and S. Elag{\"o}z and O. G{\"u}lseren and A. Aydınlı",

note = "Publisher Copyright: {\textcopyright} 2019",

year = "2019",

month = apr,

doi = "10.1016/j.spmi.2019.01.008",

language = "English",

volume = "128",

pages = "9--13",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

publisher = "Elsevier Ltd",

}

TY - JOUR

T1 - Distributed contact flip chip InGaN/GaN blue LED; comparison with conventional LEDs

AU - Genç, M.

AU - Sheremet, V.

AU - Elçi, M.

AU - Kasapoğlu, A. E.

AU - Altuntaş,

AU - Demir,

AU - Eğin, G.

AU - İslamoğlu, S.

AU - Gür, Emre

AU - Muzafferoğlu, N.

AU - Elagöz, S.

AU - Gülseren, O.

AU - Aydınlı, A.

PY - 2019/4

Y1 - 2019/4

N2 - This paper presents high performance, GaN/InGaN-based light emitting diodes (LEDs) in three different device configurations, namely Top Emitting (TE) LED, conventional Flip Chip (FC) and Distributed Contact (DC) FC. Series resistances as low as 1.1 Ω have been obtained from FC device configurations with a back reflecting ohmic contact of Ni/Au/RTA/Ni/Ag metal stack. A small shift has been observed between electroluminescence (EL) emissions of TE LED and the FC LEDs. In addition, FWHM value of the EL emission of DCFC LED has shown the minimum value of 160 meV (26.9 nm). Furthermore, DCFC LED configuration has shown the highest quantum efficiency and power output, with 330 mW at 500 mA current injection, compared to that of traditional wire bonded TE LEDs and the conventional FC LEDs.

AB - This paper presents high performance, GaN/InGaN-based light emitting diodes (LEDs) in three different device configurations, namely Top Emitting (TE) LED, conventional Flip Chip (FC) and Distributed Contact (DC) FC. Series resistances as low as 1.1 Ω have been obtained from FC device configurations with a back reflecting ohmic contact of Ni/Au/RTA/Ni/Ag metal stack. A small shift has been observed between electroluminescence (EL) emissions of TE LED and the FC LEDs. In addition, FWHM value of the EL emission of DCFC LED has shown the minimum value of 160 meV (26.9 nm). Furthermore, DCFC LED configuration has shown the highest quantum efficiency and power output, with 330 mW at 500 mA current injection, compared to that of traditional wire bonded TE LEDs and the conventional FC LEDs.

KW - Current distribution

KW - LED performance

KW - Light emitting diodes

KW - Luminescence

UR - https://www.scopus.com/pages/publications/85060333837

U2 - 10.1016/j.spmi.2019.01.008

DO - 10.1016/j.spmi.2019.01.008

M3 - Article

AN - SCOPUS:85060333837

SN - 0749-6036

VL - 128

SP - 9

EP - 13

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

ER -

Distributed contact flip chip InGaN/GaN blue LED; comparison with conventional LEDs

Abstract

Keywords

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