@inbook{08e4d3ad575a418b96038d64017c5b96,
title = "Do we have to worry about extended defects in high-mobility materials?",
abstract = "An overview is given on how to tackle the question of the electrical activity of extended defects which are inevitably present in hetero-epitaxial III-V layers on silicon. Analysis methods are described which rely on simple device structures containing a specific type of extended defect (here, threading dislocations). Applying the same methods to real scaled FinFETs is rather challenging. Instead Generation-Recombination noise spectroscopy provides data that can be compared with other more standard techniques, like Deep-Level Transient Spectroscopy (DLTS) in order to identify the presence of an electrically active extended defect in the channel material.",
author = "Eddy Simoen and Hsu, \{Po Chun\} and Liang He and Yves Mols and Bernadette Kunert and Robert Langer and Niamh Waldron and Geert Eneman and Nadine Collaert and Mark Heyns and Cor Claeys",
note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 2018 China Semiconductor Technology International Conference, CSTIC 2018 ; Conference date: 11-03-2018 Through 12-03-2018",
year = "2018",
month = may,
day = "29",
doi = "10.1109/CSTIC.2018.8369190",
language = "English",
series = "China Semiconductor Technology International Conference 2018, CSTIC 2018",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "1--4",
editor = "Hanming Wu and Peilin Song and Qinghuang Lin and Yuchun Wang and Cor Claeys and Hsiang-Lang Lung and Ying Zhang and Steve Liang and Yiyu Shi and Ru Huang and Zhen Guo and Kafai Lai",
booktitle = "China Semiconductor Technology International Conference 2018, CSTIC 2018",
address = "United States",
}