Dopant redistribution effects in preamorphized silicon during low temperature annealing

V. C. Venezia; R. Duffy; L. Pelaz; M. Aboy; A. Heringa; P. B. Griffin; C. C. Wang; M. J.P. Hopstaken; Y. Tamminga; T. Dao; B. J. Pawlak; F. Roozeboom

Dopant redistribution effects in preamorphized silicon during low temperature annealing

V. C. Venezia
, R. Duffy
, L. Pelaz
, M. Aboy
, A. Heringa
, P. B. Griffin
, C. C. Wang
, M. J.P. Hopstaken
, Y. Tamminga
, T. Dao
, B. J. Pawlak
, F. Roozeboom

Research output: Contribution to journal › Article › peer-review

Abstract

The time evolution of B, As, and In doping profiles during and after solid phase epitaxial regrowth (SPER) was monitored for conditions applicable to sub-65 nm CMOS technologies. As and In segregate during SPER by a sweep of the regrowing interface. In the case of B, significant B diffusion in a-Si occurs during SPER, while afterwards B uphill diffusion dominates. With the aid of atomistic simulation we have identified a temperature dependent time to maximum uphill B diffusion.

Original language	English
Pages (from-to)	489-492
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
Publication status	Published - 2003
Externally published	Yes
Event	IEEE International Electron Devices Meeting - Washington, DC, United States Duration: 8 Dec 2003 → 10 Dec 2003

Cite this

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title = "Dopant redistribution effects in preamorphized silicon during low temperature annealing",

abstract = "The time evolution of B, As, and In doping profiles during and after solid phase epitaxial regrowth (SPER) was monitored for conditions applicable to sub-65 nm CMOS technologies. As and In segregate during SPER by a sweep of the regrowing interface. In the case of B, significant B diffusion in a-Si occurs during SPER, while afterwards B uphill diffusion dominates. With the aid of atomistic simulation we have identified a temperature dependent time to maximum uphill B diffusion.",

author = "Venezia, \{V. C.\} and R. Duffy and L. Pelaz and M. Aboy and A. Heringa and Griffin, \{P. B.\} and Wang, \{C. C.\} and Hopstaken, \{M. J.P.\} and Y. Tamminga and T. Dao and Pawlak, \{B. J.\} and F. Roozeboom",

year = "2003",

language = "English",

pages = "489--492",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "IEEE International Electron Devices Meeting ; Conference date: 08-12-2003 Through 10-12-2003",

}

TY - JOUR

T1 - Dopant redistribution effects in preamorphized silicon during low temperature annealing

AU - Venezia, V. C.

AU - Duffy, R.

AU - Pelaz, L.

AU - Aboy, M.

AU - Heringa, A.

AU - Griffin, P. B.

AU - Wang, C. C.

AU - Hopstaken, M. J.P.

AU - Tamminga, Y.

AU - Dao, T.

AU - Pawlak, B. J.

AU - Roozeboom, F.

PY - 2003

Y1 - 2003

N2 - The time evolution of B, As, and In doping profiles during and after solid phase epitaxial regrowth (SPER) was monitored for conditions applicable to sub-65 nm CMOS technologies. As and In segregate during SPER by a sweep of the regrowing interface. In the case of B, significant B diffusion in a-Si occurs during SPER, while afterwards B uphill diffusion dominates. With the aid of atomistic simulation we have identified a temperature dependent time to maximum uphill B diffusion.

AB - The time evolution of B, As, and In doping profiles during and after solid phase epitaxial regrowth (SPER) was monitored for conditions applicable to sub-65 nm CMOS technologies. As and In segregate during SPER by a sweep of the regrowing interface. In the case of B, significant B diffusion in a-Si occurs during SPER, while afterwards B uphill diffusion dominates. With the aid of atomistic simulation we have identified a temperature dependent time to maximum uphill B diffusion.

UR - https://www.scopus.com/pages/publications/17644436255

M3 - Article

AN - SCOPUS:17644436255

SN - 0163-1918

SP - 489

EP - 492

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - IEEE International Electron Devices Meeting

Y2 - 8 December 2003 through 10 December 2003

ER -

Dopant redistribution effects in preamorphized silicon during low temperature annealing

Abstract

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