TY - GEN
T1 - Doping of sub-50nm SOI layers
AU - Pawlak, Bartek J.
AU - Duffy, Ray
AU - Van Dal, Mark
AU - Voogt, Frans
AU - Weemaes, Robbert
AU - Roozeboom, Fred
AU - Zalm, Peer
AU - Bennett, Nick
AU - Cowern, Nick
PY - 2008
Y1 - 2008
N2 - Doping of thin body Si becomes very essential topic due to increasing interest of forming source/drain regions in fully depleted planar silicon-on-isolator (SOI) devices or vertical Fin field-effect-transistors (FinFETs). To diminish the role of the short-channel-effect (SCE) control, the Si layers thicknesses target the 10 nm range. In this paper many aspects of thin Si body doping are discussed: dopant retention, implantation-related amorphization, thin body recrystallization, sheet resistance (Rs) and carrier mobility in crystalline or amorphized material, impact of the annealing ambient on Rs for various SOI thicknesses. The complexity of 3D geometry for vertical Fin and the vicinity of the extended surface have an impact on doping strategies that are significantly different than for planar bulk devices.
AB - Doping of thin body Si becomes very essential topic due to increasing interest of forming source/drain regions in fully depleted planar silicon-on-isolator (SOI) devices or vertical Fin field-effect-transistors (FinFETs). To diminish the role of the short-channel-effect (SCE) control, the Si layers thicknesses target the 10 nm range. In this paper many aspects of thin Si body doping are discussed: dopant retention, implantation-related amorphization, thin body recrystallization, sheet resistance (Rs) and carrier mobility in crystalline or amorphized material, impact of the annealing ambient on Rs for various SOI thicknesses. The complexity of 3D geometry for vertical Fin and the vicinity of the extended surface have an impact on doping strategies that are significantly different than for planar bulk devices.
UR - https://www.scopus.com/pages/publications/62949146320
U2 - 10.1557/proc-1070-e04-06
DO - 10.1557/proc-1070-e04-06
M3 - Conference proceeding
AN - SCOPUS:62949146320
SN - 9781605110400
T3 - Materials Research Society Symposium Proceedings
SP - 169
EP - 175
BT - Doping Engineering for Front-End Processing
PB - Materials Research Society
T2 - 2008 MRS Spring Meeting
Y2 - 25 March 2008 through 27 March 2008
ER -