@inproceedings{40e94ce25f0645cca256a0e6e9f4ab65,
title = "Double polysilicon capacitors in 1 μm analogue CMOS technology",
abstract = "In this paper we present a combined experimental and theoretical investigation of the capacitance-voltage behaviour of n+polysilicon/oxide/n+polysilicon (double polysilicon) capacitors. The theoretical models for the capacitance-voltage behaviour are compared to experimental results, and used to predict how the voltage coefficients of the double polysilicon capacitor are influenced by technological factors such as doping concentration and oxide thickness. For the first time the theoretical solution is derived using the complete Fermi-Dirac statistics to account for the degenerate doping levels present in the polysilicon films.",
author = "Hurley, \{P. K.\} and L. Wall and A. Mathewson",
note = "Publisher Copyright: {\textcopyright} 1993 Editions Frontieres.; 23rd European Solid State Device Research Conference, ESSDERC 1993 ; Conference date: 13-09-1993 Through 16-09-1993",
year = "1993",
language = "English",
isbn = "9782863321355",
series = "European Solid-State Device Research Conference",
publisher = "IEEE Computer Society",
pages = "569--572",
editor = "Noblanc, \{J. P.\} and P. Gentil and M. Verdone and J. Borel and A. Nouailhat",
booktitle = "ESSDERC 1993 - Proceedings of the 23rd European Solid State Device Research Conference",
address = "United States",
}