Dual state antiphase excitability in optically injected quantum dot lasers

  • B. Kelleher
  • , D. Goulding
  • , B. Tykalewicz
  • , N. Fedorov
  • , I. Dubinkin
  • , S. P. Hegarty
  • , G. Huyet
  • , T. Erneux
  • , E. A. Viktorov

Research output: Chapter in Book/Report/Conference proceedingsConference proceedingpeer-review

Abstract

Depending on device and operating parameters, the emission of lasers based on InAs quantum dot (QD) material may come from the ground state (GS) only, from the first excited state (ES) only or simultaneously from both states. When the emission is from the ES only, optical injection at the GS frequency can completely suppress the ES output and instead, phase-locked emission from the GS can be obtained. We report on a variety of non-linear phenomena obtained when the frequency of the master laser is varied revealing two antiphase, dual-state excitable regimes.

Original languageEnglish
Title of host publicationSemiconductor Lasers and Laser Dynamics VII
EditorsAngel Valle, Rainer Michalzik, Krassimir Panajotov, Marc Sciamanna
PublisherSPIE
ISBN (Electronic)9781510601376
DOIs
Publication statusPublished - 2016
EventSemiconductor Lasers and Laser Dynamics VII - Brussels, Belgium
Duration: 4 Apr 20167 Apr 2016

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume9892
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceSemiconductor Lasers and Laser Dynamics VII
Country/TerritoryBelgium
CityBrussels
Period4/04/167/04/16

Keywords

  • Optical Injection
  • Quantum dot devices

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