Dynamic characteristics of InGaAs/InP multiple quantum well discrete mode laser diodes emitting at 2 μm

J. O'Carroll; D. Byrne; B. Kelly; R. Phelan; F. C.G. Gunning; P. M. Anandarajah; L. P. Barry

doi:10.1049/el.2013.3257

Dynamic characteristics of InGaAs/InP multiple quantum well discrete mode laser diodes emitting at 2 μm

J. O'Carroll
, D. Byrne
, B. Kelly
, R. Phelan
, F. C.G. Gunning
, P. M. Anandarajah
, L. P. Barry

Research output: Contribution to journal › Article › peer-review

Abstract

The dynamic characteristics of a discrete mode laser diode fabricated in the InGaAs/InP multiple quantum well material system and emitting single mode at λ ≈ 2.0 μm are reported. Results are presented on the electro-optical bandwidth, direct modulation and gain switched performance.

Original language	English
Pages (from-to)	948-950
Number of pages	3
Journal	Electronics Letters
Volume	50
Issue number	13
DOIs	https://doi.org/10.1049/el.2013.3257
Publication status	Published - 19 Jun 2014

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10.1049/el.2013.3257

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title = "Dynamic characteristics of InGaAs/InP multiple quantum well discrete mode laser diodes emitting at 2 μm",

abstract = "The dynamic characteristics of a discrete mode laser diode fabricated in the InGaAs/InP multiple quantum well material system and emitting single mode at λ ≈ 2.0 μm are reported. Results are presented on the electro-optical bandwidth, direct modulation and gain switched performance.",

author = "J. O'Carroll and D. Byrne and B. Kelly and R. Phelan and Gunning, \{F. C.G.\} and Anandarajah, \{P. M.\} and Barry, \{L. P.\}",

year = "2014",

month = jun,

day = "19",

doi = "10.1049/el.2013.3257",

language = "English",

volume = "50",

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journal = "Electronics Letters",

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T1 - Dynamic characteristics of InGaAs/InP multiple quantum well discrete mode laser diodes emitting at 2 μm

AU - O'Carroll, J.

AU - Byrne, D.

AU - Kelly, B.

AU - Phelan, R.

AU - Gunning, F. C.G.

AU - Anandarajah, P. M.

AU - Barry, L. P.

PY - 2014/6/19

Y1 - 2014/6/19

N2 - The dynamic characteristics of a discrete mode laser diode fabricated in the InGaAs/InP multiple quantum well material system and emitting single mode at λ ≈ 2.0 μm are reported. Results are presented on the electro-optical bandwidth, direct modulation and gain switched performance.

AB - The dynamic characteristics of a discrete mode laser diode fabricated in the InGaAs/InP multiple quantum well material system and emitting single mode at λ ≈ 2.0 μm are reported. Results are presented on the electro-optical bandwidth, direct modulation and gain switched performance.

UR - https://www.scopus.com/pages/publications/84902657462

U2 - 10.1049/el.2013.3257

DO - 10.1049/el.2013.3257

M3 - Article

AN - SCOPUS:84902657462

SN - 0013-5194

VL - 50

SP - 948

EP - 950

JO - Electronics Letters

JF - Electronics Letters

IS - 13

ER -

Dynamic characteristics of InGaAs/InP multiple quantum well discrete mode laser diodes emitting at 2 μm

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