Dynamic scenarios of multistable switching in semiconductor superlattices

  • A. Amann
  • , A. Wacker
  • , L. L. Bonilla
  • , E. Schöll

Research output: Contribution to journalArticlepeer-review

Abstract

An attempt is made to demonstrate that, provided that Ohmic boundary conditions are chosen to model the contact regions, different mechanisms for domain formation occur for different boundary conditions and sizes of the voltage step in domain-wall relocation experiments. Two generic times characterize the transition from unstable to stable operating points on the current-voltage characteristic: a delay time and a switching time.

Original languageEnglish
Pages (from-to)1-8
Number of pages8
JournalPhysical Review E - Statistical, Nonlinear, and Soft Matter Physics
Volume63
Issue number6
DOIs
Publication statusPublished - Jun 2001
Externally publishedYes

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

  1. SDG 7 - Affordable and Clean Energy
    SDG 7 Affordable and Clean Energy

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