Dynamics of 1.55 μm Buried Tunnel Junction VCSELs under optical injection around threshold

Research output: Chapter in Book/Report/Conference proceedingsChapterpeer-review

Abstract

An investigation into the carrier and spectral dynamics of a 1.55 μm Buried Tunnel Junction (BTJ) VCSEL was carried out by examining the emission spectra under high resolution and the voltage across the junction as polarisation resolved light from a tunable laser source was injected into the cavity. The VCSEL combines an epitaxial InGaAlAs distributed Bragg reflector with a Si/ZnS dielectric reflector and an oval shaped BTJ leading to a predominantly single transverse polarisation mode and laser linewidths as low as 20 MHz. Around lasing threshold and injecting into the primary mode, the voltage required to maintain the current drops due to stimulated emission and a consequent reduction in the carrier density. Locking behaviour associated with this characteristic is measured with increased input power. Voltage drops as large as 6 mV are measured. Above threshold, injection locking is measured in addition to features associated with the relaxation oscillations of the carriers.

Original languageEnglish
Title of host publicationVertical-Cavity Surface-Emitting Lasers XIV
DOIs
Publication statusPublished - 2010
EventVertical-Cavity Surface-Emitting Lasers XIV - San Francisco, CA, United States
Duration: 27 Jan 201028 Jan 2010

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume7615
ISSN (Print)0277-786X

Conference

ConferenceVertical-Cavity Surface-Emitting Lasers XIV
Country/TerritoryUnited States
CitySan Francisco, CA
Period27/01/1028/01/10

Keywords

  • Buried Tunnel Junction
  • Injection locking
  • Optical injection
  • VCSEL

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