Effect of amorphization on activation and deactivation of boron in source/drain, channel and polygate

B. J. Pawlak; R. Duffy; T. Janssens; W. Vandervorst; S. Severi; O. Richard; A. Benedetti; P. Eyben; B. Colombeau; N. E.B. Cowern; R. A. Camillo-Castillo; K. S. Jones; M. Aboy

Effect of amorphization on activation and deactivation of boron in source/drain, channel and polygate

B. J. Pawlak
, R. Duffy
, T. Janssens
, W. Vandervorst
, S. Severi
, O. Richard
, A. Benedetti
, P. Eyben
, B. Colombeau
, N. E.B. Cowern
, R. A. Camillo-Castillo
, K. S. Jones
, M. Aboy

Research output: Contribution to conference › Paper › peer-review

Abstract

In this work, we investigate the effect of Ge amorphization and low temperature regrowth on the activation and deactivation of boron in the source and drain region, transistor channel and polycrystalline gate. It is concluded that amorphization of silicon offers important advantages for boron activation enhancement and junction depth control. Simultaneously it introduces problems related to the channel deactivation and partially activated poly.

Original language	English
Pages	43-49
Number of pages	7
Publication status	Published - 2005
Externally published	Yes
Event	207th ECS Meeting - Quebec, Canada Duration: 16 May 2005 → 20 May 2005

Conference

Conference	207th ECS Meeting
Country/Territory	Canada
City	Quebec
Period	16/05/05 → 20/05/05

Cite this

@conference{9bb891b9513b4f5b9159d9468cf6c4a8,

title = "Effect of amorphization on activation and deactivation of boron in source/drain, channel and polygate",

abstract = "In this work, we investigate the effect of Ge amorphization and low temperature regrowth on the activation and deactivation of boron in the source and drain region, transistor channel and polycrystalline gate. It is concluded that amorphization of silicon offers important advantages for boron activation enhancement and junction depth control. Simultaneously it introduces problems related to the channel deactivation and partially activated poly.",

author = "Pawlak, \{B. J.\} and R. Duffy and T. Janssens and W. Vandervorst and S. Severi and O. Richard and A. Benedetti and P. Eyben and B. Colombeau and Cowern, \{N. E.B.\} and Camillo-Castillo, \{R. A.\} and Jones, \{K. S.\} and M. Aboy",

year = "2005",

language = "English",

pages = "43--49",

note = "207th ECS Meeting ; Conference date: 16-05-2005 Through 20-05-2005",

}

TY - CONF

T1 - Effect of amorphization on activation and deactivation of boron in source/drain, channel and polygate

AU - Pawlak, B. J.

AU - Duffy, R.

AU - Janssens, T.

AU - Vandervorst, W.

AU - Severi, S.

AU - Richard, O.

AU - Benedetti, A.

AU - Eyben, P.

AU - Colombeau, B.

AU - Cowern, N. E.B.

AU - Camillo-Castillo, R. A.

AU - Jones, K. S.

AU - Aboy, M.

PY - 2005

Y1 - 2005

N2 - In this work, we investigate the effect of Ge amorphization and low temperature regrowth on the activation and deactivation of boron in the source and drain region, transistor channel and polycrystalline gate. It is concluded that amorphization of silicon offers important advantages for boron activation enhancement and junction depth control. Simultaneously it introduces problems related to the channel deactivation and partially activated poly.

AB - In this work, we investigate the effect of Ge amorphization and low temperature regrowth on the activation and deactivation of boron in the source and drain region, transistor channel and polycrystalline gate. It is concluded that amorphization of silicon offers important advantages for boron activation enhancement and junction depth control. Simultaneously it introduces problems related to the channel deactivation and partially activated poly.

UR - https://www.scopus.com/pages/publications/31844433454

M3 - Paper

AN - SCOPUS:31844433454

SP - 43

EP - 49

T2 - 207th ECS Meeting

Y2 - 16 May 2005 through 20 May 2005

ER -

Effect of amorphization on activation and deactivation of boron in source/drain, channel and polygate

Abstract

Conference

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