Effect of annealing on the properties of indium-tin-oxynitride films as ohmic contacts for GaN-based optoelectronic devices

Marcel Himmerlich; Maria Koufaki; Gernot Ecke; Christof Mauder; Volker Cimalla; Juergen A. Schaefer; Antonis Kondilis; Nikos T. Pelekanos; Mircea Modreanu; Stefan Krischok; Elias Aperathitis

doi:10.1021/am900138f

Effect of annealing on the properties of indium-tin-oxynitride films as ohmic contacts for GaN-based optoelectronic devices

Marcel Himmerlich
, Maria Koufaki
, Gernot Ecke
, Christof Mauder
, Volker Cimalla
, Juergen A. Schaefer
, Antonis Kondilis
, Nikos T. Pelekanos
, Mircea Modreanu
, Stefan Krischok
, Elias Aperathitis

Research output: Contribution to journal › Article › peer-review

Abstract

Indium-tin-oxynitride (ITON) films have been fabricated by rf sputtering from an indium?tin?oxide target in nitrogen plasma. The influence of postdeposition annealing up to 800 °C is analyzed by electrical, optical, and surface characterization of the films in comparison to indium?tin?oxide (ITO) films fabricated in argon plasma. High-temperature annealing resulted in ITO(N) films with similar carrier concentrations. However, the resistivity and optical transmittance of the ITON films were higher than those of the ITO films. Photoelectron spectroscopy revealed that nitrogen is incorporated into the ITON structure in an unbound state as well as through the formation of metal?nitrogen and oxynitride bonds that decorate oxygen vacancies. When the core level electron spectra of ITO and ITON films are compared, a correlation between carrier concentration and the incorporated nitrogen is found. Changes in ITON electrical properties are mainly induced by the release of nitrogen at temperatures above 550 °C. In this context, ohmic contact behavior was achieved for ITON on p-type GaN after annealing at 600 °C, while no ohmic contact could be realized using ITO.

Original language	English
Pages (from-to)	1451-1456
Number of pages	6
Journal	ACS Applied Materials and Interfaces
Volume	1
Issue number	7
DOIs	https://doi.org/10.1021/am900138f
Publication status	Published - 29 Jul 2009

Keywords

oxides
oxynitrides
photoelectron spectroscopy
semiconductors
sputtering

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This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1021/am900138f

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Himmerlich, M., Koufaki, M., Ecke, G., Mauder, C., Cimalla, V., Schaefer, J. A., Kondilis, A., Pelekanos, N. T., Modreanu, M., Krischok, S., & Aperathitis, E. (2009). Effect of annealing on the properties of indium-tin-oxynitride films as ohmic contacts for GaN-based optoelectronic devices. ACS Applied Materials and Interfaces, 1(7), 1451-1456. https://doi.org/10.1021/am900138f

@article{bd0f4935252241ecb3fc20eb921bd044,

title = "Effect of annealing on the properties of indium-tin-oxynitride films as ohmic contacts for GaN-based optoelectronic devices",

abstract = "Indium-tin-oxynitride (ITON) films have been fabricated by rf sputtering from an indium?tin?oxide target in nitrogen plasma. The influence of postdeposition annealing up to 800 °C is analyzed by electrical, optical, and surface characterization of the films in comparison to indium?tin?oxide (ITO) films fabricated in argon plasma. High-temperature annealing resulted in ITO(N) films with similar carrier concentrations. However, the resistivity and optical transmittance of the ITON films were higher than those of the ITO films. Photoelectron spectroscopy revealed that nitrogen is incorporated into the ITON structure in an unbound state as well as through the formation of metal?nitrogen and oxynitride bonds that decorate oxygen vacancies. When the core level electron spectra of ITO and ITON films are compared, a correlation between carrier concentration and the incorporated nitrogen is found. Changes in ITON electrical properties are mainly induced by the release of nitrogen at temperatures above 550 °C. In this context, ohmic contact behavior was achieved for ITON on p-type GaN after annealing at 600 °C, while no ohmic contact could be realized using ITO.",

keywords = "oxides, oxynitrides, photoelectron spectroscopy, semiconductors, sputtering",

author = "Marcel Himmerlich and Maria Koufaki and Gernot Ecke and Christof Mauder and Volker Cimalla and Schaefer, \{Juergen A.\} and Antonis Kondilis and Pelekanos, \{Nikos T.\} and Mircea Modreanu and Stefan Krischok and Elias Aperathitis",

year = "2009",

month = jul,

day = "29",

doi = "10.1021/am900138f",

language = "English",

volume = "1",

pages = "1451--1456",

journal = "ACS Applied Materials and Interfaces",

issn = "1944-8244",

publisher = "American Chemical Society",

number = "7",

}

Himmerlich, M, Koufaki, M, Ecke, G, Mauder, C, Cimalla, V, Schaefer, JA, Kondilis, A, Pelekanos, NT, Modreanu, M, Krischok, S & Aperathitis, E 2009, 'Effect of annealing on the properties of indium-tin-oxynitride films as ohmic contacts for GaN-based optoelectronic devices', ACS Applied Materials and Interfaces, vol. 1, no. 7, pp. 1451-1456. https://doi.org/10.1021/am900138f

TY - JOUR

T1 - Effect of annealing on the properties of indium-tin-oxynitride films as ohmic contacts for GaN-based optoelectronic devices

AU - Himmerlich, Marcel

AU - Koufaki, Maria

AU - Ecke, Gernot

AU - Mauder, Christof

AU - Cimalla, Volker

AU - Schaefer, Juergen A.

AU - Kondilis, Antonis

AU - Pelekanos, Nikos T.

AU - Modreanu, Mircea

AU - Krischok, Stefan

AU - Aperathitis, Elias

PY - 2009/7/29

Y1 - 2009/7/29

N2 - Indium-tin-oxynitride (ITON) films have been fabricated by rf sputtering from an indium?tin?oxide target in nitrogen plasma. The influence of postdeposition annealing up to 800 °C is analyzed by electrical, optical, and surface characterization of the films in comparison to indium?tin?oxide (ITO) films fabricated in argon plasma. High-temperature annealing resulted in ITO(N) films with similar carrier concentrations. However, the resistivity and optical transmittance of the ITON films were higher than those of the ITO films. Photoelectron spectroscopy revealed that nitrogen is incorporated into the ITON structure in an unbound state as well as through the formation of metal?nitrogen and oxynitride bonds that decorate oxygen vacancies. When the core level electron spectra of ITO and ITON films are compared, a correlation between carrier concentration and the incorporated nitrogen is found. Changes in ITON electrical properties are mainly induced by the release of nitrogen at temperatures above 550 °C. In this context, ohmic contact behavior was achieved for ITON on p-type GaN after annealing at 600 °C, while no ohmic contact could be realized using ITO.

AB - Indium-tin-oxynitride (ITON) films have been fabricated by rf sputtering from an indium?tin?oxide target in nitrogen plasma. The influence of postdeposition annealing up to 800 °C is analyzed by electrical, optical, and surface characterization of the films in comparison to indium?tin?oxide (ITO) films fabricated in argon plasma. High-temperature annealing resulted in ITO(N) films with similar carrier concentrations. However, the resistivity and optical transmittance of the ITON films were higher than those of the ITO films. Photoelectron spectroscopy revealed that nitrogen is incorporated into the ITON structure in an unbound state as well as through the formation of metal?nitrogen and oxynitride bonds that decorate oxygen vacancies. When the core level electron spectra of ITO and ITON films are compared, a correlation between carrier concentration and the incorporated nitrogen is found. Changes in ITON electrical properties are mainly induced by the release of nitrogen at temperatures above 550 °C. In this context, ohmic contact behavior was achieved for ITON on p-type GaN after annealing at 600 °C, while no ohmic contact could be realized using ITO.

KW - oxides

KW - oxynitrides

KW - photoelectron spectroscopy

KW - semiconductors

KW - sputtering

UR - https://www.scopus.com/pages/publications/81755176248

U2 - 10.1021/am900138f

DO - 10.1021/am900138f

M3 - Article

AN - SCOPUS:81755176248

SN - 1944-8244

VL - 1

SP - 1451

EP - 1456

JO - ACS Applied Materials and Interfaces

JF - ACS Applied Materials and Interfaces

IS - 7

ER -

Effect of annealing on the properties of indium-tin-oxynitride films as ohmic contacts for GaN-based optoelectronic devices

Abstract

Keywords

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