Effect of forming gas annealing on the inversion response and minority carrier generation lifetime of n and p-In0. 53Ga0. 47As MOS capacitors

Ailbe O'Manachain

doi:10.1016/J.MEE.2015.04.103

Effect of forming gas annealing on the inversion response and minority carrier generation lifetime of n and p-In0. 53Ga0. 47As MOS capacitors

Ailbe O'Manachain

Tyndall MicroNano Systems

Research output: Contribution to journal › Article › peer-review

Original language	Undefined/Unknown
Journal	Microelectronic Engineering
DOIs	https://doi.org/10.1016/J.MEE.2015.04.103
Publication status	Published - 2015

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10.1016/J.MEE.2015.04.103

Cite this

@article{7590dffba6db482c90fe3a2cd4ac0de9,

title = "Effect of forming gas annealing on the inversion response and minority carrier generation lifetime of n and p-In0. 53Ga0. 47As MOS capacitors",

author = "Ailbe O'Manachain",

year = "2015",

doi = "10.1016/J.MEE.2015.04.103",

language = "Undefined/Unknown",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier B.V.",

}